Author: claimsbot

1. A tungsten film forming method for forming a tungsten film on a surface of a substrate while heating the substrate in a depressurized atmosphere in a processing chamber, the method comprising:
forming an initial tungsten film for tungsten nucleation on the surface of the substrate by alternately repeating a supply of WF6 gas which is raw material of tungsten and a supply of H2 gas which is a reducing gas in the processing chamber while performing a purge in the processing chamber between the supplies of the WF6 gas and the H2 gas;
adsorbing a gas containing a material for nucleation onto a surface of the initial tungsten film;
depositing a crystallinity blocking tungsten film for blocking crystallinity of the initial tungsten film by supplying the WF6 gas and the H2 gas into the processing chamber; and
after stopping the supply of the WF6 gas and increasing a pressure in the processing chamber after completion of deposition of the crystallinity blocking tungsten film, depositing a main tungsten film by supplying the WF6 gas and the H2 gas at a pressure higher than that during deposition of the crystallinity blocking tungsten film while setting a flow rate of the WF6 gas to be higher than that during deposition of the crystallinity blocking tungsten film.
2. The tungsten film forming method of claim 1, wherein a time until deposition of the main tungsten film after completion of deposition of the crystallinity blocking tungsten film is set to 20 to 270 seconds.
3. The tungsten film forming method of claim 1, wherein the crystallinity blocking tungsten film has a thickness of 0.5 to 11.5 nm.
4. The tungsten film forming method of claim 1, wherein deposition of the crystallinity blocking tungsten film is performed while the pressure in the processing chamber is set to 100 to 26667 Pa, the flow rate of the WF6 gas is set to 5 to 200 sccm (mLmin), and a flow rate of the H2 gas is set to 100 to 12000 sccm (mLmin).
5. The tungsten film forming method of claim 1, wherein the adsorption of the gas is performed by supplying SiH4 gas serving as a silicon compound gas and the H2 gas.
6. The tungsten film forming method of claim 1, wherein adsorption of the gas is performed for 10 seconds or more.
7. The tungsten film forming method claim 1, wherein deposition of the main tungsten film is performed while the pressure in the processing chamber is set to 2666 to 26667 Pa, the flow rate of the WF6 gas is set to 150 to 700 sccm (mLmin), and a flow rate of the H2 gas is set to 1000 to 12000 sccm (mLmin).
8. The tungsten film forming method of claim 1, wherein the main tungsten film has a thickness of 25 nm or more.
9. The tungsten film forming method of claim 1, wherein after deposition of the main tungsten film, the substrate is annealed.
10. The tungsten film forming method of claim 9, wherein the annealing is performed at a temperature of 700\xb0 C. or more.
11. The tungsten film forming method of claim 9, wherein the main tungsten film has a thickness of 10 to 25 nm.
12. The tungsten film forming method of claim 1, wherein if the main tungsten film has a thickness of 10 to 25 nm, the crystallinity blocking tungsten film has a thickness of 3 nm or less.
13. The tungsten film forming method of claim 12, wherein the crystallinity blocking tungsten film has a thickness of 1.5 nm or less.
14. The tungsten film forming method of claim 1, wherein deposition of the initial tungsten film is performed for 4 to 20 seconds per cycle while the pressure in the processing chamber is set to 100 to 8000 Pa, the flow rate of the WF6 gas is set to 50 to 500 sccm (mLmin), and a flow rate of the H2 gas is set to 500 to 12000 sccm (mLmin), and the initial tungsten film has a thickness of 0.5 to 3.0 nm.
15. The tungsten film forming method of claim 1, wherein deposition of the initial tungsten film is performed by performing vacuum evacuation while stopping the supply of a purge gas during the purge.
16. The tungsten film forming method of claim 1, further comprising:
performing an initiation process to form nuclei on the surface of the substrate prior to deposition of the initial tungsten film.
17. The tungsten film forming method of claim 16, wherein the initiation process is performed by supplying SiH4 gas.
18. The tungsten film forming method of claim 1, wherein a temperature of a mounting table for supporting the substrate is 350 to 500\xb0 C.
19. The tungsten film forming method of claim 1, wherein a TiN film is formed on the surface of the substrate.
20. A tungsten film forming method for forming a tungsten film on a surface of a substrate while heating the substrate in a depressurized atmosphere in a processing chamber, the method comprising:
forming an initial tungsten film for tungsten nucleation on the surface of the substrate by alternately repeating a supply of WF6 gas which is raw material of tungsten and a supply of H2 gas which is a reducing gas in the processing chamber while performing a purge in the processing chamber between the supplies of the WF6 gas and the H2 gas;
depositing a crystallinity blocking tungsten film for blocking crystallinity of the initial tungsten film by supplying the WF6 gas and the H2 gas into the processing chamber; and
after stopping the supply of the WF6 gas and increasing a pressure in the processing chamber after completion of deposition of the crystallinity blocking tungsten film, depositing a main tungsten film by supplying the WF6 gas and the H2 gas at a pressure higher than that during deposition of the crystallinity blocking tungsten film while setting a flow rate of the WF6 gas to be higher than that during deposition of the crystallinity blocking tungsten film.
21. The tungsten film forming method of claim 20, wherein a time until deposition of the main tungsten film after completion of deposition of the crystallinity blocking tungsten film is set to 20 to 270 seconds.
22. The tungsten film forming method of claim 20, wherein the crystallinity blocking tungsten film has a thickness of 0.5 to 11.5 nm.
23. The tungsten film forming method of claim 20, wherein deposition of the crystallinity blocking tungsten film is performed while the pressure in the processing chamber is set to 100 to 26667 Pa, the flow rate of the WF6 gas is set to 5 to 200 sccm (mLmin), and a flow rate of the H2 gas is set to 100 to 12000 sccm (mLmin).
24. The tungsten film forming method claim 20, wherein deposition of the main tungsten film is performed while the pressure in the processing chamber is set to 2666 to 26667 Pa, the flow rate of the WF6 gas is set to 150 to 700 sccm (mLmin), and a flow rate of the H2 gas is set to 1000 to 12000 sccm (mLmin).
25. The tungsten film forming method of claim 20, wherein the main tungsten film has a thickness of 25 nm or more.
26. The tungsten film forming method of claim 20, wherein after deposition of the main tungsten film, the substrate is annealed.
27. The tungsten film forming method of claim 20, wherein if the main tungsten film has a thickness of 10 to 25 nm, the crystallinity blocking tungsten film has a thickness of 3 nm or less.
28. The tungsten film forming method of claim 20, wherein deposition of the initial tungsten film is performed for 4 to 20 seconds per cycle while the pressure in the processing chamber is set to 100 to 8000 Pa, the flow rate of the WF6 gas is set to 50 to 500 sccm (mLmin), and a flow rate of the H2 gas is set to 500 to 12000 sccm (mLmin), and the initial tungsten film has a thickness of 0.5 to 3.0 nm.
29. The tungsten film forming method of claim 20, wherein deposition of the initial tungsten film is performed by performing vacuum evacuation while stopping the supplies of a purge gas during the purge.
30. The tungsten film forming method of claim 20, further comprising:
performing an initiation process to form nuclei on the surface of the substrate prior to deposition of the initial tungsten film.
31. The tungsten film forming method of claim 20, wherein a temperature of a mounting table for supporting the substrate is 350 to 500\xb0 C.
32. The tungsten film forming method of claim 20, wherein a TiN film is formed on the surface of the substrate.
33. A tungsten film forming method for forming a tungsten film on a surface of a substrate while heating the substrate in a depressurized atmosphere in a processing chamber, the method comprising:
forming an initial tungsten film for tungsten nucleation on the surface of the substrate by alternately repeating a supply of WF6 gas which is raw material of tungsten and a supply of H2 gas which is a reducing gas in the processing chamber while performing a purge in the processing chamber between the supplies of the WF6 gas and the H2 gas;
adsorbing a gas containing a material for nucleation onto a surface of the initial tungsten film; and
depositing a main tungsten film onto the substrate on which the gas containing the material for nucleation is adsorbed by supplying the WF6 gas and the H2 gas in the processing chamber.
34. The tungsten film forming method of claim 33, wherein the adsorption of the gas is performed by supplying SiH4 gas serving as a silicon compound gas and the H2 gas.
35. The tungsten film forming method of claim 33, wherein adsorption of the gas is performed for 10 seconds or more.
36. The tungsten film forming method claim 33, wherein deposition of the main tungsten film is performed while the pressure in the processing chamber is set to 2666 to 26667 Pa, the flow rate of the WF6 gas is set to 150 to 700 sccm (mLmin), and a flow rate of the H2 gas is set to 1000 to 12000 sccm (mLmin).
37. The tungsten film forming method of claim 33, wherein the main tungsten film has a thickness of 25 nm or more.
38. The tungsten film forming method of claim 33, wherein after deposition of the main tungsten film, the substrate is annealed.
39. The tungsten film forming method of claim 33, wherein deposition of the initial tungsten film is performed for 4 to 20 seconds per cycle while the pressure in the processing chamber is set to 100 to 8000 Pa, the flow rate of the WF6 gas is set to 50 to 500 sccm (mLmin), and a flow rate of the H2 gas is set to 500 to 12000 sccm (mLmin), and the initial tungsten film has a thickness of 0.5 to 3.0 nm.
40. The tungsten film forming method of claim 33, wherein deposition of the initial tungsten film is performed by performing vacuum evacuation while stopping the supplies of a purge gas during the purge.
41. The tungsten film forming method of claim 33, further comprising:
performing an initiation process to form nuclei on the surface of the substrate prior to deposition of the initial tungsten film.
42. The tungsten film forming method of claim 33, wherein a temperature of a mounting table for supporting the substrate is 350 to 500\xb0 C.
43. The tungsten film forming method of claim 33, wherein a TiN film is formed on the surface of the substrate.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1.-22. (canceled)
23. A navigation apparatus comprising:
a location determining unit for determining a location of the apparatus; and
one or more processors configured to monitor a speed of the apparatus, or a parameter associated therewith; wherein, when in use, the apparatus is arranged to:
detect the location of a temporarily-located road feature by detection of a speed profile of the apparatus corresponding to a predetermined speed change profile;
generate a message comprising data indicative of the location at which the speed profile was detected;
prompt a user of the device for a confirmatory input in response to the detection; and
upon receipt of the confirmatory input, generate confirmatory data.
24. An apparatus as claimed in claim 23, wherein the predetermined speed change profile is substantially U-shaped.
25. An apparatus as claimed in claim 23, wherein the predetermined speed change profile comprises a first portion corresponding to a reduction in speed.
26. An apparatus as claimed in claim 25, wherein the predetermined speed change profile comprises a second portion corresponding to maintaining speed substantially below or substantially equal to a speed limit.
27. An apparatus as claimed in claim 26, wherein the maintenance of the speed is for a minimum predetermined duration.
28. An apparatus as claimed in claim 26, wherein the predetermined speed change profile comprises a third portion corresponding to an increase in speed.
29. An apparatus as claimed in claim 26 wherein the maintenance of the second portion follows the first portion.
30. An apparatus as claimed in claim 28, wherein the third portion follows the second portion.
31. An apparatus as claimed in claim 23 wherein the prompt for confirmatory input comprises one of; a telephone call to the user, a text message or a prompt via the user interface of the navigation apparatus.
32. An apparatus as claimed in claim 23, configured to receive the confirmatory input via a hardware or software button on the navigation apparatus, or via voice input.
33. An apparatus as claimed in claim 23, further configured to transmit the message to a remote processing device.
34. An apparatus as claimed in claim 33, wherein the message further comprises the confirmatory data.
35. A method of identifying a temporarily located road feature that engenders vehicular speed behaviour change, the method comprising:
providing a navigation apparatus comprising:
a location determining unit for determining a location of the apparatus; and
one ore more processors configured to monitor a speed of the apparatus, or a parameter associated therewith;
detecting the location of a temporarily-located road feature by detection of a speed profile of the apparatus corresponding to a predetermined speed change profile
generating a message comprising data indicative of the location at which the speed profile was detected;
prompting a user of the device for a confirmatory input in response to the detection; and
upon receipt of the confirmatory input, generating confirmatory data.
36. A computer program element, embodied on a computer readable medium, comprising computer program code for making a computer execute the method as claimed in claim 35.

1. A method for adhesive bonding using a two-part adhesive having an activator part and an adhesive part comprising:
(1) contacting a substrate with the activator part to form a treated substrate, the activator part comprising a solvent, which contains either methyl ethyl ketone or methyl methacrylate monomer, or both, and dihydropyridine, to form a treated substrate;
(2) contacting the treated substrate with the adhesive part, the adhesive part comprising methyl methacrylate, at least one sulfur-containing compound, and cumene hydroperoxide;
wherein the activator part is partially or completely absorbed by the substrate, and wherein the treated substrate does not contain a residue and remains active for bonding with the adhesive part for a period of time up to about 10 weeks from forming the treated substrate.
2. A method of activating the surface of a substrate for use with adhesive bonding comprising:
contacting a substrate with a reactive solvent and at least one pyridine reducing agent, wherein the reactive solvent and at least one pyridine reducing agent are at least partially absorbed by the substrate to form an activated surface, wherein the activated surface contains no residue and remains active for adhesive bonding for up to at least about 10 weeks.
3. The method of claim 2, wherein the reactive solvent is selected from the group consisting of methyl ethyl ketone, methyl methacrylate monomer, and a mixture thereof.
4. The method of claim 2, wherein the reactive solvent is methyl ethyl ketone.
5. The method of claim 2, wherein the reactive solvent is present in an amount in the range of from about 5 to about 90 weight percent.
6. The method of claim 2, wherein the at least one pyridine reducing agent is dihydropyridine.
7. The method of claim 2, wherein the activated surface remains active for adhesive bonding in the range of from about 1 month to about 2 months from when the activated surface is formed.
8. The method of claim 2, wherein the activated surface remains active for adhesive bonding in the range of from about 3 weeks to about 5 weeks from when the activated surface is formed.
9. The method of claim 2, wherein the activated surface remains active for adhesive bonding in the range of from about 8 to about 10 weeks from when the activated surface is formed.
10. The method of claim 2, wherein the reactive solvent and at least one pyridine reducing agent are sprayed onto the substrate.
11. The method of claim 2, wherein the reactive solvent and at least one pyridine reducing agent are rolled onto the substrate.
12. The method of claim 2, wherein the substrate is selected from the group consisting of thermoplastic materials, thermoset engineering plastics, metal and mixtures thereof.
13. The method of claim 2, wherein the substrate is selected from the group consisting of PVC (polyvinyl chloride), ABS (acrylonitrile-butadine-styrene), FRP (fiber reinforced plastics), PC (polycarbonate), PS (poly styrene) and the like and mixtures thereof.
14. The method of claim 2, wherein the substrate is selected from the group consisting of unprepared metals, painted metals, oil-contaminated surfaces and water-contaminated surfaces.
15. A method of activating the surface of a substrate for use with adhesive bonding comprising:
contacting a substrate with a reactive solvent comprising methyl ethyl ketone and at least one pyridine reducing agent, wherein the reactive solvent and at least one pyridine reducing agent are at least partially absorbed by the substrate to form an activated surface, wherein the activated surface contains no residue and remains active for adhesive bonding for up to at least about 10 weeks.
16. The method of claim 15, wherein the reactive solvent further comprises methyl methacrylate monomer.
17. The method of claim 15, wherein the reactive solvent is present in an amount in the range of from about 5 to about 90 weight percent.
18. The method of claim 15, wherein the at least one pyridine reducing agent is dihydropyridine.
19. The method of claim 15, wherein the activated surface remains active for adhesive bonding in the range of from about 1 month to about 2 months from when the activated surface is formed.
20. The method of claim 15, wherein the activated surface remains active for adhesive bonding in the range of from about 3 weeks to about 5 weeks from when the activated surface is formed.
21. The method of claim 15, wherein the activated surface remains active for adhesive bonding in the range of from about 8 to about 10 weeks from when the activated surface is formed.
22. The method of claim 15, wherein the reactive solvent and at least one pyridine reducing agent are sprayed onto the substrate.
23. The method of claim 15, wherein the reactive solvent and at least one pyridine reducing agent are rolled onto the substrate.
24. The method of claim 15, wherein the substrate is selected from the group consisting of thermoplastic materials, thermoset engineering plastics, metal and mixtures thereof.
25. The method of claim 15, wherein the substrate is selected from the group consisting of PVC (polyvinyl chloride), ABS (acrylonitrile-butadine-styrene), FRP (fiber reinforced plastics), PC (polycarbonate), PS (poly styrene) and the like and mixtures thereof.
26. The method of claim 15, wherein the substrate is selected from the group consisting of unprepared metals, painted metals, oil-contaminated surfaces and water-contaminated surfaces.
27. A method of activating the surface of a substrate for use with adhesive bonding comprising:
contacting a substrate with a reactive solvent and at least one pyridine reducing agent, wherein the substrate is selected from the group consisting of unprepared metals, painted metals, oil-contaminated surfaces and water-contaminated surfaces, and wherein the reactive solvent and at least one pyridine reducing agent are at least partially absorbed by the substrate to form an activated surface, wherein the activated surface contains no residue and remains active for adhesive bonding for up to at least about 10 weeks.
28. The method of claim 27, wherein the reactive solvent is selected from the group consisting of methyl ethyl ketone, or methyl methacrylate monomer, or a mixture thereof.
29. The method of claim 27, wherein the reactive solvent is methyl ethyl ketone.
30. The method of claim 27, wherein the reactive solvent is present in an amount in the range of from about 5 to about 90 weight percent.
31. The method of claim 27, wherein the at least one pyridine reducing agent is dihydropyridine.
32. The method of claim 27, wherein the activated surface remains active for adhesive bonding in the range of from about 1 month to about 2 months from when the activated surface is formed.
33. The method of claim 27, wherein the activated surface remains active for adhesive bonding in the range of from about 3 weeks to about 5 weeks from when the activated surface is formed.
34. The method of claim 27, wherein the activated surface remains active for adhesive bonding in the range of from about 8 to about 10 weeks from when the activated surface is formed.
35. The method of claim 27, wherein the reactive solvent and at least one pyridine reducing agent are sprayed onto the substrate.
36. The method of claim 27, wherein the reactive solvent and at least one pyridine reducing agent are rolled onto the substrate.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for feeding cellulose-containing pulp from a dewatering unit for dewatering pulp, the dewatered pulp from the dewatering unit being discharged via an outlet, included in the dewatering unit, to a reception means for receiving the dewatered pulp, which reception means is positioned below the outlet, whereupon the pulp is transported from the reception means to a stand pipe via an inlet included in the stand pipe, in which stand pipe the pulp falls freely under the influence of gravity, the reception means being positioned at a higher level than the inlet of the stand pipe, wherein at least one feeding down surface is arranged which extends from the reception means to the inlet of the stand pipe, in that the transport of the pulp between the reception means and the inlet of the stand pipe is effected by feeding the pulp downwards along and on this feeding down surface under the influence of gravity, and in that the pulp is diluted by adding dilution fluid during the feeding of the pulp downwards along and on the feeding down surface.
2. The method according to claim 1, wherein the dilution fluid is added under pressure in the form of fluid jets.
3. The method according to claim 1 wherein the dilution fluid is added at the reception means.
4. The method according to claim 1, wherein dilution fluid is added to the pulp from above during the feeding of the pulp between the reception means and the inlet of the stand pipe.
5. The method according to claim 1, further comprising laterally controlling the pulp fed on the feeding down surface in relation to the direction of movement of the pulp fed on the feeding down surface.
6. The method according to claim 1, wherein the reception means comprises a portion of the feeding down surface, and in that the pulp, which is discharged from the outlet, is directly received by the feeding down surface.
7. The method according to claim 1, wherein the stand pipe is arranged displaced from the reception means in a horizontal direction.
8. A device for feeding cellulose-containing pulp from a dewatering unit for dewatering pulp, the dewatered pulp from the dewatering unit being discharged via an outlet included in the dewatering unit, which device comprises a reception means for receiving the dewatered pulp discharged from the dewatering unit, which receptions means is adapted to be positioned below said outlet, and a stand pipe provided with an inlet, in which stand pipe the pulp falls freely under the influence of gravity, the device being arranged to transport the pulp from the reception means to the inlet of the stand pipe, and the reception means is positioned at a higher level than the inlet of the stand pipe, the device comprising one or several dilution means for adding dilution fluid and diluting the pulp, wherein the device comprises at least one feeding down surface which extends from the reception means to the inlet of the stand pipe, in that the feeding down surface is arranged to transport pulp between the reception means and the inlet of the stand pipe by feeding the pulp downwards along and on this feeding down surface under the influence of gravity, and in that the dilution means are arranged to dilute the pulp during the feeding of the pulp downwards along and on the feeding down surface.
9. The device according to claim 8, wherein the dilution means are arranged to add dilution fluid under pressure in the form of fluid jets.
10. The device according to claim 8, wherein at least one dilution means is arranged to add dilution fluid at the reception means.
11. The device according to claim 8, wherein at least one dilution means is arranged to add dilution fluid to the pulp from above during the feeding of the pulp between the reception means and the inlet of the stand pipe.
12. The device according to claim 8, wherein each dilution means comprises an elongated nozzle provided with several apertures for distributing dilution fluid, and in that this nozzle extends transversely to the longitudinal direction of the feeding down surface.
13. The device according to claim 12, wherein the nozzle is rotatable around its longitudinal axis.
14. The device according to claim 8, wherein the feeding down surface is provided with control means for laterally controlling the pulp in relation to the direction of movement of the pulp fed on the feeding down surface.
15. The device according to claim 8, wherein the device comprises an opening positioned at a higher level than inlet of the stand pipe, through which opening pulp is dischargeable upon blockage in the stand pipe.
16. The device according to claim 8, wherein the reception means comprises a portion of the feeding down surface, in that the feeding down surface is adapted to extend under the outlet of the dewatering unit, and in that the feeding down surface is arranged to receive the pulp directly from said outlet.
17. The device according to claim 8, the stand pipe is arranged displaced from the reception means in a horizontal direction.
18. A plant for treating cellulose-containing pulp, comprising a dewatering unit for dewatering pulp provided with an outlet for discharging dewatered pulp from the dewatering unit, and a device for feeding pulp from the dewatering unit, which device comprises a reception means for receiving the dewatered pulp discharged from the dewatering unit, which receptions means is positioned below said outlet and a stand pipe provided with an inlet, in which stand pipe the pulp falls freely under the influence of gravity, the device being arranged to feed pulp from the reception means to the inlet of the stand pipe, and the reception means is positioned at a higher level than the inlet of the stand pipe, wherein the device comprises at least one feeding down surface which extends from the reception means to the inlet of the stand pipe, in that the feeding down surface is arranged to transport pulp between the reception means and the inlet of the stand pipe by feeding the pulp downwards along and on this feeding down surface under the influence of gravity, and in that the dilution means are arranged to dilute the pulp during the feeding of the pulp downwards along and on the feeding down surface.