Author: claimsbot

What is claimed is:

1. A resin composition comprising 70 to 99.9% by weight of ethylene-vinyl alcohol copolymer (A) and 0.1 to 30% by weight of a thermoplastic resin (B) other than the ethylene-vinyl alcohol copolymer (A), wherein
an ethylene content ETa (mol %) and a degree of saponification SDa (%) of the ethylene-vinyl alcohol copolymer (A) satisfy the following equations (1) and (2):
25ETa55(1) 90SDa<99(2), and
an oxygen absorption rate of the resin composition is 0.01 mlm2day or more.
2. A resin composition comprising 70 to 99.9% by weight of ethylene-vinyl alcohol copolymer (A) and 0.1 to 30% by weight of a thermoplastic resin (B) other than the ethylene-vinyl alcohol copolymer (A), wherein
the ethylene-vinyl alcohol copolymer (A) comprises at least two kinds of ethylene-vinyl alcohol copolymers (a1) and (a2), ethylene contents ETa1 (mol %) and ETa2 (mol %) and degrees of saponification SDa1 (%) and SDa2 (%) of the ethylene-vinyl alcohol copolymers (a1) and (a2), respectively, satisfy the following equations (3) to (6):
25ETa155(3) 90SDa1<99(4) 25ETa255(5) 99SDa2(6),
a weight ratio (a1a2) of the ethylene-vinyl alcohol copolymers (a1) and (a2) is 595 to 955, and
an oxygen absorption rate of the resin composition is
0.01 mlm2day or more.
3. The resin composition of claim 2, wherein the thermoplastic resin (B) comprises a carbon-carbon double bond.
4. The resin composition of any one of claim 2, further comprises a transition metal salt (C).
5. The resin composition of claim 2, wherein the thermoplastic resin (B) comprises a carbon-carbon double bond in a ratio of 0.0001 eqg or more.
6. The resin composition of claim 2, wherein the thermoplastic resin (B) comprises a unit represented by formula (I)
3
wherein R1 is a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R2 is a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an aryl group, an alkylaryl group, an arylalkyl group or an alkoxy group, R3 and R4 are each independently a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an aryl group that can be substituted, COOR5, OCOR6, an cyano group or a halogen atom, and R5 and R6 are each independently an alkyl group having 1 to 10 carbon atoms, an aryl group, an alkylaryl group, an arylalkyl group or an alkoxy group.
7. The resin composition of claim 2, wherein a molecular weight of the thermoplastic resin (B) is 1000 to 500000.
8. The resin composition of claim 2, wherein the thermoplastic resin (B) comprises an aromatic vinyl compound unit and a diene compound unit.
9. The resin composition of claim 8, wherein the diene compound unit is at least one of an isoprene unit and a butadiene unit.
10. The resin composition of claim 8, wherein the aromatic vinyl compound unit is a styrene unit.
11. The resin composition of claim 8, wherein the thermoplastic resin (B) is a block copolymer.
12. The resin composition of claim 2, wherein the thermoplastic resin (B) is a styrene-isoprene block copolymer.
13. The resin composition of claim 2, wherein a difference in refractive index between the ethylene-vinyl alcohol copolymer (A) and the thermoplastic resin (B) is 0.01 or less.
14. The resin composition of claim 2, wherein particles of the thermoplastic resin (B) are dispersed in a matrix of the ethylene-vinyl alcohol copolymer (A).
15. A resin composition comprising ethylene-vinyl alcohol copolymer (A), a thermoplastic resin (B) other than the ethylene-vinyl alcohol copolymer (A), and a transition metal salt (C), wherein
an ethylene content ETa (mol %) and a degree of saponification SDa (%) of the ethylene-vinyl alcohol copolymer (A) satisfy the following equations (1) and (2):
25ETa55(1) 90SDa<99(2), and
the thermoplastic resin (B) comprises a carbon-carbon double bond.
16. A resin composition comprising ethylene-vinyl alcohol copolymer (A), a thermoplastic resin (B) other than the ethylene-vinyl alcohol copolymer (A), and a transition metal salt (C), wherein
the ethylene-vinyl alcohol copolymer (A) comprises at least two kinds of ethylene-vinyl alcohol copolymers (a1) and (a2),
ethylene contents ETa1 (mol %) and ETa2 (mol %) and degrees of saponification SDa1 (%) and SDa2 (%) of the ethylene-vinyl alcohol copolymers (a1) and (a2), respectively, satisfy the following equations (3) to (6):
25ETa155(3) 90SDa1<99(4) 25ETa255(5) 99SDa2(6),
a weight ratio (a1a2) of the ethylene-vinyl alcohol copolymers (a1) and (a2) is 595 to 955, and
the thermoplastic resin (B) comprises a carbon-carbon double bond.
17. The resin composition of claim 16, wherein the transition metal salt (C) is contained in a ratio of 1 to 5000 ppm in terms of metal element, based on a total weight of the ethylene-vinyl alcohol copolymer (A) and the thermoplastic resin (B).
18. The resin composition of claim 16, wherein the transition metal salt (C) comprises at least one transition metal selected from the group consisting of iron, nickel, copper, manganese, and cobalt.
19. The resin composition of claim 16, wherein the thermoplastic resin (B) comprises a carbon-carbon double bond in a ratio of 0.0001 eqg or more.
20. The resin composition of claim 16, wherein the thermoplastic resin (B) comprises a unit represented by formula (I)
4
wherein R1 is a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R2 is a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an aryl group, an alkylaryl group, an arylalkyl group or an alkoxy group, R3 and R4 are each independently a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an aryl group that can be substituted, COOR5, OCOR6, an cyano group or a halogen atom, and R5 and R6 are each independently an alkyl group having 1 to 10 carbon atoms, an aryl group, an alkylaryl group, an arylalkyl group or an alkoxy group.
21. The resin composition of claim 16, wherein a molecular weight of the thermoplastic resin (B) is 1000 to 500000.
22. The resin composition of claim 16, wherein the thermoplastic resin (B) comprises an aromatic vinyl compound unit and a diene compound unit.
23. The resin composition of claim 22, wherein the diene compound unit is at least one of an isoprene unit and a butadiene unit.
24. The resin composition of claim 22, wherein the aromatic vinyl compound unit is a styrene unit.
25. The resin composition of claim 22, wherein the thermoplastic resin (B) is a block copolymer.
26. The resin composition of claim 16, wherein the thermoplastic resin (B) is a styrene-isoprene block copolymer.
27. The resin composition of claims 16, wherein a difference in refractive index between the ethylene-vinyl alcohol copolymer (A) and the thermoplastic resin (B) is 0.01 or less.
28. The resin composition of claim 16, wherein particles of the thermoplastic resin (B) are dispersed in a matrix of the ethylene-vinyl alcohol copolymer (A).
29. A resin composition comprising ethylene-vinyl alcohol copolymer (A), a thermoplastic resin (13) other than the ethylene-vinyl alcohol copolymer (A), and a transition metal salt (C), wherein
the ethylene-vinyl alcohol copolymer (A) is contained in an amount of 70 to 99.9% by weight and the thermoplastic resin (B) is contained in an amount of 0.1 to 30% by weight,
the ethylene-vinyl alcohol copolymer (A) comprises at least two kinds of ethylene-vinyl alcohol copolymers (a1) and (a2),
ethylene contents ETa1 (mol %) and ETa2 (mol %) and degrees of saponification SDa1 (%) and SDa2 (%) of the ethylene-vinyl alcohol copolymers (a1) and (a2), respectively, satisfy the following equations (3) to (6):
25ETa155(3) 90SDa1<99(4) 25ETa255(5) 99SDa2(6),
a weight ratio (a1a2) of the ethylene-vinyl alcohol copolymers (a1) and (a2) is 595 to 955,
the thermoplastic resin (B) comprises a carbon-carbon double bond, and
an oxygen absorption rate of the resin composition is 0.01 mlm2day or more.
30. A multilayered structure comprising at least one layer made of the resin composition of claim 2.
31. A multilayered container comprising at least one layer made of the resin composition of claim 2 and at least one thermoplastic polyester layer.
32. The multilayered container of claim 31, wherein two thermoplastic polyester layers are arranged so as to be in direct contact with both surfaces of the layer made of the resin composition.
33. A coinjection blow molded container having a multilayered structure, in which two thermoplastic polyester layers are arranged so as to be in direct contact with both surfaces of a layer made of the resin composition of claim 2.
34. A multilayered structure comprising at least one layer made of the resin composition of claim 16.
35. A multilayered container comprising at least one layer made of the resin composition of claim 16 and at least one thermoplastic polyester layer.
36. The multilayered container of claim 35, wherein two thermoplastic polyester layers are arranged so as to be in direct contact with both surfaces of the layer made of the resin composition.
37. A coinjection blow molded container having a multilayered structure, in which two thermoplastic polyester layers are arranged so as to be in direct contact with both surfaces of a layer made of the resin composition of claim 16.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A rotating electric machine, comprising:
a stator provided with a plurality of windings;
a rotor core rotatably fixed to a rotary shaft inside said stator; and
a plurality of magnets disposed in slots formed in said rotor core near its outer circumferential surface and configured as flat plates;
wherein a number of magnet poles is two;
each of said magnet poles includes at least three of said magnets; and
said magnets of one of said magnet poles include two end magnets arranged such that, among said magnets of said one of said magnet poles, one of said two end magnets is oriented to incline in a direction that goes to a center position of said one of said magnet poles from a center of the rotary shaft rather than in a direction that goes to the center of the magnet arranged at the magnetic pole end from a center of the rotary shaft, and another of said two end magnets is also oriented to incline in a direction that goes to the center position of said one of said magnet poles from said center of the rotary shaft rather than in a direction that goes to the center of the magnet.
2. A rotating electric machine according to claim 1, wherein a circumferential angle occupied by the magnets constituting one of said magnetic poles is in the range of 150 to 165 degrees in terms of an electrical angle.
3. A rotating electric machine according to claim 1, wherein one of said two end magnets is oriented to incline toward the magnetic pole center position so that an angle formed between said magnet and a line tangential to a point at which a straight line, passing through both the center of said rotary shaft and the center of said magnet, crosses an outer circumferential surface of said rotor core is in the range of 2.0 to 6.0 degrees.
4. A rotating electric machine according to claim 1, wherein, among the magnets constituting one magnetic pole, long sides of said end magnets are inclined, in the range of 2.0 to 6.0 degrees, from a line tangential to a point at which a straight line passing both the center of said rotary shaft and the center of said magnet crosses an outer circumferential surface of said rotor core.
5. A rotating electric machine according to claim 1, wherein a circular arc passing the centers of the two end magnets of said one of said magnetic poles has a smaller diameter than a circular arc passing the center of a magnet arranged between the two end magnets.
6. A rotating electric machine according to claim 1, wherein said slots are shaped such that slits are formed between adjacent magnets of said plurality of magnets.
7. A rotating electric machine according to claim 1,
wherein at least six of said slots are provided in said rotor core, and
said slots are arranged such that long sides of said slots in which said end magnets are arranged are inclined, in the range of 2.0 to 6.0 degrees, from a line tangential to a point at which a straight line passing both the center of said rotary shaft and the center of said magnet crosses an outer circumferential surface of said rotor core.

1-41. (canceled)
42. A method of increasing the utilization efficiency of absorbed light energy in a photosynthetic microorganism incapable of flagella-based motility comprising:
a. transforming the microorganism with an RNAi construct in operable linkage with a light activated promoter, wherein the RNAi construct targets a transcript encoding an antenna protein in the microorganism;
b. culturing the transformed microorganism in a culture container made of non-transparent material;
c. exposing the transformed microorganism to light only from above the plane of the surface of the culture media; and
d. screening the transformed microorganism for the ability to generate more oxygen, lipid, hydrogen, recombinant protein or ATP than a starting strain.
43. A photosynthetic microorganism containing an antisense or RNAi construct that targets a transcript of a gene that encodes a protein involved in light harvesting, wherein the antisense or RNAi construct is in operable linkage with a promoter that is activated by light.
44. A genetic construct comprising:
a. a light activated promoter;
b. an antisense or RNAi segment that contains at least 10 nucleotides of a gene encoding a protein involved in light harvesting; and
c. a screenable or selectable marker gene in operable linkage with a promoter.
45. The genetic construct of claim 44, wherein the antisense or RNAi segment encodes a section of a gene that encodes a protein that binds a light absorbing pigment.
46. A population of photosynthetic microorganisms in liquid culture media, wherein:
a. the population is exposed to light from above the plane of the surface of the culture media;
b. at least one cell in the population contains an antisense or RNAi segment comprising at least 10 nucleotides of a gene encoding a protein involved in light harvesting in operable linkage with a promoter that is activated by light; and
c. cells on the top of the population express the antisense or RNAi segment at a higher level than cells on the bottom of the population.
47. The population of claim 46, wherein the cells of the population are incapable of flagella-based motility.
48. (canceled)
49. The genetic construct of claim 44, wherein the genetic construct comprises an RNAi segment.
50. The genetic construct of claim 49, wherein the RNAi segment targets transcripts from more than one gene.
51. The genetic construct of claim 44, wherein the genetic construct comprises an antisense segment.
52. The genetic construct of claim 51, wherein the antisense segment targets transcripts from more than one gene.
53. (canceled)
54. The genetic construct of claim 49, wherein the RNAi segment targets transcripts from only one gene.
55. The genetic construct of claim 51, wherein the antisense segment targets transcripts from only one gene.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A flash memory device, comprising:
a plurality of memory cell blocks, each memory cell block being associated with select lines, pass word lines, and word lines, at least one pass word line being provided between one select line and one word line;
an operating voltage generator to output operating voltages to global select lines, global word lines and global pass word lines;
a block switching unit to connect the global word lines to the word lines and the select lines in response to a block select signal; and
a voltage supply circuit connected to the select lines and the pass word lines and configured to supply the select lines and the pass word lines with a ground voltage in response to a block select inverse signal.
2. The flash memory device of claim 1, wherein the select lines, the word lines and the pass word lines are formed at a same distance in the memory cell block.
3. The flash memory device of claim 1, wherein the select lines, the word lines and the pass word lines are configured to have substantially the same width.
4. The flash memory device of claim 1, wherein the operating voltage generator comprises:
a select line voltage generator to supply a first voltage to the global select lines;
a programreaderase voltage generator to supply a second voltage to the global word lines; and
a pass voltage generator to supply a third voltage to the global pass word lines.
5. The flash memory device of claim 1, wherein the block switching unit is configured to connect the global pass word lines and the pass word lines in response to the block select signal.
6. The flash memory device of claim 1, wherein the global pass word lines and the pass word lines are connected directly.
7. The flash memory device of claim 1, wherein the voltage supply circuit is provided in each memory cell block.
8. The flash memory device of claim 1, wherein:
the voltage supply circuit includes switching elements configured to operate in response to the block select inverse signal, the switch elements having first ends and second ends, the first ends connected to the select lines and the pass word lines, respectively, the second ends connected to a ground terminal.
9. The flash memory device of claim 1, further comprising a switching unit to connect pass word lines of a block group including two or more of the memory cell blocks to the global pass word line in response to a block group select signal.
10. The flash memory device of claim 9, wherein when the block select signal to select one of the memory cell blocks included in the block group is activated, the block group select signal is activated.
11. A method for programming a NAND flash memory device, the method comprising:
providing a plurality of memory cell blocks, each memory cell block being associated with at least one drain select line, at least one source select line, a plurality of word lines, at least one drain pass word line, and at least one source pass word line, the drain pass word line provided between the drain select line and the word line, the source pass word line provided between the source select line and the word line;
applying a pass voltage to a drain pass word line and a source pass word line associated with a selected memory cell block; and
applying a ground voltage to drain pass word lines and source pass word lines associated with unselected memory cell blocks.
12. The method of claim 11, wherein the drain select line of the selected memory cell block is applied with a power supply voltage, and the source select line of the selected memory cell block is applied with the ground voltage, and
the drain select lines and the source select lines of the unselected memory cell blocks are applied with the ground voltage.
13. The method of claim 12, further comprising:
applying a program voltage to a word line associated with a selected memory cell of the selected memory cell block;
applying the pass voltage to a word line associated with an unselected memory cell of the selected memory cell block; and
floating the word lines associated with the unselected memory cell blocks.
14. A method for reading a NAND flash memory device, the method comprising:
providing a plurality of memory cell blocks, each memory cell block comprising a drain select line, a source select line and word lines, and having a drain pass word line and a source pass word line provided between the drain select line and the word line and between the source select line and the word line, respectively;
applying a read pass voltage to a drain pass word line and a source pass word line of a selected memory cell block; and
applying the read pass voltage or a ground voltage to drain pass word lines and source pass word lines of unselected memory cell.
15. The method of claim 14, the drain select line and the source select line of the selected memory cell block are applied with a power supply voltage, and the drain select lines and the source select lines of the unselected memory cell blocks are applied with a ground voltage.
16. The method of claim 15, further comprising:
applying a read voltage to a word line of a selected memory cell of the selected memory cell block; and
applying the read pass voltage to word lines of unselected memory cells of the selected memory cell block; and
floating word lines of the unselected memory cell.
17. A method for erasing a flash memory device, the method comprising:
providing a plurality of memory cell blocks, each memory cell block comprising a drain select line, a source select line and word lines, and having a drain pass word line and a source pass word line provided between the drain select line and the word line and between the source select line and the word line, respectively;
applying a ground voltage to a drain pass word line and a source pass word line of a selected memory cell block; and
floating drain pass word lines and source pass word lines of unselected memory cell blocks.
18. The method of claim 17, wherein the drain select line and the source select line of the selected memory cell block are set to a floating state, word lines of the selected memory cell block are applied with the ground voltage, and the drain select lines, the source select lines and the word lines of the unselected memory cell blocks are set to a floating state.
19. The method of claim 17, further comprising:
performing a post program operation after the erase operation in order to narrow the threshold voltage distributions of the memory cells erased by the erase operation.
20. The method of claim 19, wherein in the post program operation, the word lines, the drain pass word line and the source pass word line of the selected memory cell block are applied with a post program voltage, the word lines of the unselected memory cell blocks are set to a floating state, and the drain pass word lines and the source pass word lines of the unselected memory cell blocks are applied with the ground voltage.
21. The method of claim 20, wherein:
the drain select lines of the selected memory cell block and the unselected memory cell blocks are applied with a power supply voltage, and
the source select lines of the selected memory cell block and the unselected memory cell blocks are applied with the ground voltage.
22. The method of claim 17, further comprising:
performing an erase verify operation after performing the erase operation.
23. The method of claim 19, further comprising;
performing an erase verify operation after performing the post program operation.