1. A method of manufacturing a semiconductor device, comprising the steps of:
forming a plurality of gate electrodes on the surface of a semiconductor substrate, the gate electrodes being spaced from each other, the substrate having a first region and a second region, wherein the spacing between the gate electrodes in the first region is smaller than the spacing between the gate electrodes in the second region;
forming dummy structures in the second region such that the spacing between the dummy structures and the second region gate electrodes is substantially the same as the spacing between the first region gate electrodes; and
laser thermal annealing using a laser;
wherein the dummy structures are formed such that the spacing between the dummy structures and the second region gate electrodes causes the second region to be heated by the laser to substantially the same extent as the first region.
2. The method of claim 1, comprising forming the gate electrodes and dummy structures as polysilicon lines.
3. The method of claim 2, comprising forming the gate electrodes and the dummy structures simultaneously.
4. The method of claim 3, comprising:
forming a layer of polysilicon on the substrate;
photolithographically forming a patterned photoresist mask on the polysilicon layer; and
etching to form the gate electrodes and the dummy structures.
5. The method of claim 1, wherein the substrate surface comprises a plurality of regions, including the first and second regions, that are device structure regions having gate electrodes, the method comprising forming the dummy structures in all of the device structure regions where the spacing between the gate electrodes is larger than the spacing between the gate electrodes in the first region.
6. The method of claim 5, wherein the substrate surface comprises open regions without device structures between the device structure regions, the method comprising forming the dummy structures in the open regions such that the spacing between the dummy structures in the open regions is substantially the same as the spacing between the first region gate electrodes.
7. The method of claim 6, comprising forming the dummy structures such that substantially the entire surface of the substrate comprises dummy structures, gate electrodes or both with spacing substantially the same as the spacing between the first region gate electrodes.
8. The method of claim 6, comprising forming the dummy structures in the open regions substantially as an array of horizontal and vertical broken lines.
9. The method of claim 8, comprising forming the dummy structures such that they have a length substantially the same as the length of the gate electrodes.
10. The method of claim 8, wherein the spacing between the first region gate electrodes is about 0.5 \u03bcm.
11. The method of claim 1, comprising forming the dummy structures such that their spacing corresponds to a design rule of the semiconductor device.
12. A method of manufacturing a semiconductor device, comprising the steps of:
forming a plurality of gate electrodes in a first region on the surface of a semiconductor substrate, the gate electrodes being spaced from each other, and at least one gate electrode in a second region on the substrate surface;
forming dummy structures in the second region such that the spacing between the dummy structures and the at least one second region gate electrode is substantially the same as the spacing between the first region gate electrodes; and
laser thermal annealing using a laser;
wherein the dummy structures are formed such that the spacing between the dummy structures and the second region gate electrodes causes the second region to be heated by the laser to substantially the same extent as the first region.
13. The method of claim 12, comprising forming the gate electrodes and dummy structures as polysilicon lines.
14. The method of claim 12, wherein the substrate surface comprises an open region without device structures between the first and second regions, the method comprising forming the dummy structures in the open region such that the spacing between the dummy structures in the open region is substantially the same as the spacing between the first region gate electrodes.
15. The method of claim 14, comprising forming the dummy structures such that substantially the entire surface of the substrate comprises dummy structures, gate electrodes or both with spacing substantially the same as the spacing between the first region gate electrodes.
16. The method of claim 14, comprising forming the dummy structures in the open region substantially as an array of horizontal and vertical broken lines.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A climate control system of a motor vehicle comprising:
a control device having a temperature control for selecting an air temperature supplied by the system, the temperature control operatively connected with a switch controlling an additional operating function of the climate control system such that actuation of the temperature control to a demist temperature position actuates the additional operating function to a windshield demist mode.
2. The apparatus of claim 1, wherein the demist temperature position is a full-hot position.
3. The apparatus of claim 1, wherein the temperature control is moveably supported in one operating plane.
4. The apparatus of claim 1, wherein the additional operating function is a air recirculation operating function, and actuation of temperature control to the demist temperature position turns air recirculation off.
5. The apparatus of claim 1, wherein the additional operating function is an air conditioning operating function, and actuation of the temperature control to the demist temperature position turns an air conditioner system on.
6. The apparatus of claim 1, wherein the additional operating function is an air blower operating function, and actuation of the temperature control to the demist temperature position turns an air blower to maximum output.
7. The apparatus of claim 1, wherein the additional operating function is an air distribution operating function, and actuation of the temperature control to the demist temperature position directs the ventilation toward a windshield.
8. The apparatus of claim 1, wherein the additional operating function is a rear window heat operating function, and actuation of the temperature control to the demist temperature position applies heat to a rear window.
9. The apparatus of claim 1, wherein the temperature control is a rotary knob.
10. Apparatus for controlling a climate control system of a motor vehicle comprising:
a temperature control actuatable by a vehicle occupant to adjust a temperature of air supplied by the system, the temperature control movable to a full-hot position wherein it activates an additional operating function of the climate control system to select a windshield demist mode.
11. Apparatus according to claim 10 wherein the additional operating function comprises at least one of an air recirculation function, an air conditioning function, a blower speed function, an air distribution function, and a rear window defrost function.
12. Apparatus according to claim 10 wherein the demist mode comprises:
setting an air recirculation function to off;
setting an air conditioning function to maximum cooling;
setting a blower speed function to maximum output; and
setting an air distribution function to direct a majority of ventilation air toward a windshield of the vehicle.
13. The apparatus of claim 10, wherein the temperature control is a rotary knob.