Author: claimsbot

1. A method of forming a semiconductor device, the method comprising:
providing a substrate;
forming a gate stack at each device location on said substrate, the gate stack including a metal gate conductor on a gate dielectric layer disposed on a device channel;
forming a gate spacer extending from the substrate about the sides of the gate stack, the thickness of said gate spacer being as thick as said gate stack;
forming sourcedrain regions adjacent said gate spacer at each end of said gate stack;
forming silicide regions on each of said sourcedrain regions;
depositing a stress liner comprising a nitride layer on said substrate overlying the metal gate and extending from said substrate between the gate spacers, said stress liner separating each silicide region at said substrate from a respective said gate spacer;
forming a dielectric layer over said stress liner, the combined thickness of said dielectric layer and said stress liner over said gate stack and said silicide regions being at least 3 times as tall as said gate stack; and
forming contacts through said combined thickness to said metal gate and the silicide regions, each gate contact being above said device channel and narrower than said gate stack.
2. The method of claim 1, wherein the gate dielectric comprises a high-k dielectric.
3. The method of claim 1, wherein the gate spacer comprises a nitride.
4. The method of claim 1, further comprising filling the space between the upper portion of the gate spacer and the gate contact with an insulator.
5. The method of claim 1, wherein the gate spacer comprises a nitride.
6. The method of claim 1, wherein the gate spacer comprises an oxide.
7. The method of claim 1, wherein the thickness of the gate stack is 3-73 nm.
8. The method of claim 2, wherein the thickness of the high-k dielectric layer is about 1-3 nm.
9. The method of claim 8, wherein the thickness of the high-k dielectric layer is about 2 nm.
10. The method of claim 1, wherein the thickness of the metal gate conductor is about 2-70 nm.
11. The method of claim 10, wherein the thickness of the metal gate conductor is about 3.5 nm.
12. The method of claim 1, wherein the metal gate conductor is TiN, TaN, or W.
13. The method of claim 1, wherein forming said semiconductor device forms a plurality of semiconductor devices on an integrated circuit chip.
14. The method of claim 1, further comprising:
forming dummy spacers outboard of said gate spacer before forming said silicide regions; and after forming said silicide regions
removing said dummy spacers to form a space between each said gate spacer and the respective silicide region, said stress liner filling each said space.
15. The method of claim 14, wherein said dummy spacers are 2-80 nm thick.
16. The method of claim 15, wherein forming said dummy spacers comprises:
forming an oxide spacer adjacent to said gate spacer; and
forming a nitride spacer adjacent to said oxide spacer.
17. The method of claim 16, wherein said oxide spacer is 5 nm thick and said nitride spacer is 5 nm thick.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A gas wiping device comprising:
a first gas wiping nozzle and a second gas wiping nozzle arranged to face each other across a steel band pulled up from a molten-metal plating bath, the first and second gas wiping nozzles configured to remove excess molten metal adhering on a surface of the steel band;
a first tubular member disposed along a width direction of the steel band, the first tubular member connected to the first gas wiping nozzle;
a second tubular member disposed along a width direction of the steel band, the second tubular member connected to the second gas wiping nozzle;
a box-shaped body housing the first and second gas wiping nozzles, and the first and second tubular members;
a first partition member having one end thereof fixed to an outer wall of the first tubular member, and having the other end thereof fixed to an inner wall of the box-shaped body; and
a second partition member having one end thereof fixed to an outer wall of the second tubular member, and having the other end thereof fixed to an inner wall of the box-shaped body, wherein
the first gas wiping nozzle includes
a first spraying segment configured to spray gas over a range as a whole in a width direction of the steel band,
a second spraying segment configured to spray gas toward the second gas wiping nozzle over a range from one end of the first spraying segment to one inner wall of the box-shaped body in a width direction of the box-shaped body, and
a third spraying segment configured to spray gas toward the second gas wiping nozzle over a range from the other end of the first spraying segment to the other inner wall of the box-shaped body in a width direction of the box-shaped body, and wherein
the second gas wiping nozzle includes
a fourth spraying segment configured to spray gas over a range as a whole in a width direction of the steel band,
a fifth spraying segment configured to spray gas toward the first gas wiping nozzle, from over a range from one end of the fourth spraying segment to one inner wall of the box-shaped body in a width direction of the box-shaped body, and
a sixth spraying segment configured to spray gas toward the first gas wiping nozzle over a range from the other end of the fourth spraying segment to the other inner wall of the box-shaped body in a width direction of the box-shaped body.
2. The gas wiping device according to claim 1, wherein
the second and third spraying segments are configured such that gas sprayed therefrom is smaller in amount than gas sprayed from the first spraying segment, and wherein
the fifth and sixth spraying segments are configured such that gas sprayed therefrom is smaller in amount than gas sprayed from the fourth spraying segment.
3. The gas wiping device according to claim 1, wherein
at least one of the first and second gas wiping nozzles is configured to move relative to the other while being in parallel with the other so that a distance therebetween can be changed within a predetermined range, and wherein
said gas wiping device further comprises a gas regulating unit configured to regulate a spraying amount of gas in accordance with a distance between the first and second gas wiping nozzles, wherein gas sprayed from the second spraying segment and gas sprayed from the fifth spraying segment contact each other, and gas sprayed from the third spraying segment and gas sprayed from the sixth spraying segment contact each other.

1. A method for comparing at least two tertiary protein structures comprising a plurality of residues, for each tertiary protein structure, the method comprising the steps of:
calculating a centroid of residue centroids;
using the centroid of residue centroids as a spatial origin of a global linear hydrophobic moment;
calculating a first-order hydrophobic moment;
enhancing correlation between residue centroid magnitude and residue solvent accessibility, wherein the correlation between residue centroid magnitude and residue solvent accessibility is enhanced using a distance metric;
using the first-order hydrophobic moment to define the global lineal hydrophobic moment, wherein each of the residue centroids contributes a magnitude and direction to the global linear hydrophobic moment, the global lineal hydrophobic moment characterizing an amphiphilicity of each tertiary protein structure;
using the global linear hydrophobic moment of each tertiary protein structure to compare the amphiphilicity of the at least two tertiary protein structures; and
outputting the global linear hydrophobic moment to at least one of a user, a display, a memory and one or more additional computers on a network.
2. The method of claim 1, wherein the centroid of residue centroids represents a geometric center of the tertiary protein structure.
3. The method of claim 1, wherein the global linear hydrophobic moment characterizes a magnitude and a direction of amphiphilicity of the at least two tertiary protein structures.
4. The method of claim 1, wherein the global linear hydrophobic moment is used to determine a hydrophobic imbalance arising from interaction of the at least two tertiary protein structures with each other.
5. The method of claim 1, wherein the correlation between residue centroid magnitude and residue solvent accessibility is enhanced using an ellipsoidal metric.
6 The method of claim 1, wherein the correlation between residue centroid magnitude and residue solvent accessibility is enhanced using a solvent accessibility metric.
7. An apparatus for comparing at least two tertiary protein structures comprising a plurality of residues, for each tertiary protein structure, the apparatus comprising:
a memory; and
at least one processor operative to:
calculate a centroid of residue centroids;
use the centroid of residue centroids as a spatial origin of a global linear hydrophobic moment;
calculate a first-order hydrophobic moment;
enhance correlation between residue centroid magnitude and residue solvent accessibility, wherein the correlation between residue centroid magnitude and residue solvent accessibility is enhanced using a distance metric;
use the first-order hydrophobic moment to define the global linear hydrophobic moment, wherein each of the residue centroids contributes a magnitude and direction to the global linear hydrophobic moment, the global linear hydrophobic moment characterizing an amphiphilicity of each tertiary protein structure;
use the global linear hydrophobic moment of each tertiary protein structure to compare the amphiphilicity of the at least two tertiary protein structures; and
output the global linear hydrophobic moment to at least one of a user, a display, a memory and one or more additional computers on a network.
8. The apparatus of claim 7, wherein the centroid of residue centroids represents a geometric center of the tertiary protein structure.
9. The apparatus of claim 7, wherein the global linear hydrophobic moment characterizes a magnitude and a direction of amphiphilicity of the at least two tertiary protein structures.
10. The apparatus of claim 7, wherein the global linear hydrophobic moment is used to determine a hydrophobic imbalance arising from interaction of the at least two tertiary protein structures with each other.
11. The apparatus of claim 7, wherein the correlation between residue centroid magnitude and residue solvent accessibility is enhanced using an ellipsoidal metric.
12. The apparatus of claim 7, wherein the correlation between residue centroid magnitude and residue solvent accessibility is enhanced using a solvent accessibility metric.
13. An article of manufacture fox comparing at least two tertiary protein structures comprising a plurality of residues, for each tertiary protein structure, comprising:
a computer-readable medium having computer-readable code embodied thereon, the computer-readable code comprising:
a step to calculate a centroid of residue centroids;
a step to use the centroid of residue centroids as a spatial origin of a global lineal hydrophobic moment;
a step to calculate a first-order hydrophobic moment;
a step to enhance correlation between residue centroid magnitude and residue solvent accessibility, wherein the correlation between residue centroid magnitude and residue solvent accessibility is enhanced using a distance metric;
a step to use the first-order hydrophobic moment to define the global lineal hydrophobic moment, wherein each of the residue centroids contributes a magnitude and direction to the global linear hydrophobic moment, the global linear hydrophobic moment characterizing an amphiphilicity of each tertiary protein structure;
a step to use the global linear hydrophobic moment of each tertiary protein structure to compare the amphiphilicity of the at least two tertiary protein structures; and
a step to output the global linear hydrophobic moment to at least one of a user, a display, a memory and one or more additional computers on a network.
14. The article of manufacture of claim 13, wherein the centroid of residue centroids represents a geometric center of the tertiary protein structure.
15. The article of manufacture of claim 13, wherein the global linear hydrophobic moment characterizes a magnitude and a direction of amphiphilicity of the at least two tertiary protein structures.
16. The article of manufacture of claim 13, wherein the global linear hydrophobic moment is used to determine a hydrophobic imbalance arising from interaction of the at least two tertiary protein structures with each other.
17. The article of manufacture of claim 13, wherein the correlation between residue centroid magnitude and residue solvent accessibility is enhanced using an ellipsoidal metric.
18. The article of manufacture of claim 13, wherein the correlation between residue centroid magnitude and residue solvent accessibility is enhanced using a solvent accessibility metric.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for responding to requests for processing made by an integration broker to an application that has a single threaded or non-reentrant API (Application Programming Interface), comprising the steps of:
spawning at least one master and a plurality of slave processes;
receiving a request for processing;
determining the type of the request;
sending the request to a slave process dedicated to that type of request.
2. The method of claim 1, wherein the determining step comprises determining whether the received request is call-triggered.
3. The method of claim 1, wherein the determining step comprises determining whether the received request is event-triggered.
4. The method of claim 2, wherein the sending step comprises sending the request to a slave process assigned to call-triggered requests, when the request is call-triggered.
5. The method of claim 3, wherein the sending step comprises sending the request to a slave process assigned to event-triggered requests, when the request is event-triggered.
6. The method of claim 3, further comprising sending the event-triggered request to a process normally assigned to call-triggered requests when there are not any available connector slave processes assigned to event-triggered requests.
7. The method of claim 2, further comprising sending the call-triggered request to a process normally assigned to event-triggered requests when there are not any available connector slave processes assigned to call-triggered requests.
8. The method of claim 1, further comprising tagging each received request as one of event-triggered or call-triggered.
9. The method of claim 1, wherein the method is performed in a hub and spoke type of application integration system comprising a hub and one or more connectors and the method further comprises the step of sending the request to a connector slave process assigned to event-triggered requests, when the request is event-triggered.
10. The method of claim 1, wherein the method is performed in a hub and spoke type of application integration system comprising a hub and one or more connectors and the method further comprises the step of sending the request to a connector slave process assigned to call-triggered requests when the request is call-triggered.
11. The method of claim 1, wherein the method is performed in a point-to-point type of application integration system.
12. An application integration system for responding to requests for processing made by an integration broker to an application that has a single threaded or non-reentrant API (Application Programming Interface), comprising a processor configured to:
spawn at least one master and a plurality of slave processes;
receive a request for processing;
determine the type of the request;
send the request to a slave process dedicated to that type of request.
13. The system of claim 12, wherein the determining step comprises determining whether the received request is call-triggered.
14. The system of claim 12, wherein the determining step comprises determining whether the received request is event-triggered.
15. The system of claim 13, wherein the sending step comprises sending the request to a slave process assigned to call-triggered requests, when the request is call-triggered.
16. The system of claim 14, wherein the sending step comprises sending the request to a slave process assigned to event-triggered requests, when the request is event-triggered.
17. The system of claim 14, wherein the processor is configured to send an event-triggered request to a process normally assigned to call-triggered requests when there are not any available connector slave processes assigned to event-triggered requests.
18. The system of claim 13, wherein the processor is configured to send a call-triggered request to a process normally assigned to event-triggered requests when there are not any available connector slave processes assigned to call-triggered requests.
19. The system of claim 12, wherein the processor is configured to tag each received request as one of event-triggered or call-triggered.
20. The system of claim 12, comprising an integration hub for inter-operating with at least one connector for each application integrated by the system.
21. The system of claim 20 wherein the integration hub comprises a thread pool of threads comprising a subset of threads for processing event-triggered requests and a subset of threads for processing call-triggered requests.
22. The system of claim 12, further comprising a connector for executing a connector master process.
23. The system of claim 12, wherein the connector comprises a request dispatcher for dispatching each received request to a queue based on the type of the request, either event-triggered or call-triggered.
24. The system of claim 12, wherein the connector comprises a plurality of resource class request queues for queuing requests.
25. The system of claim 12, wherein the connector comprises a resource cache comprising resource class pools and slave coordinators.
26. The system of claim 12, wherein the connector comprises a plurality of connector slave processes.
27. A machine-usable medium comprising program instructions for responding to requests for processing made by an integration broker to an application having a single threaded or non-reentrant API (Application Programming Interface), comprising instructions for:
spawning at least one master and a plurality of slave processes;
receiving a request for processing;
determining the type of the request;
sending the request to a slave process dedicated to that type of request.