1461109585-3fa3ddf8-cdc1-4b29-a818-d1b3d9fdeda2

1. A surface treatment system, comprising:
a microwave chamber;
an insulating cavity located within the microwave chamber and configured to receive an object;
a supply of solvent gas in selective fluid communication with the insulating cavity;
a magnetron configured to emit microwave radiation; and
a waveguide operatively connected to the microwave chamber and the magnetron and configured to direct the microwave radiation into the insulating cavity to form a solvent gas plasma from the solvent gas, the solvent gas plasma being configured to dissolve surface contamination on the object.
2. The system of claim 1, further including a supply of surface treatment gas in selective fluid communication with the insulating cavity, wherein the direction of the microwave radiation into the insulating cavity forms a surface treatment gas plasma from the surface treatment gas.
3. The system of claim 2, wherein the surface treatment gas plasma is configured for at least one of heat treating and depositing a coating on the object.
4. The system of claim 1, wherein the insulating cavity includes a heat-resistant material substantially transparent to microwave radiation.
5. A surface treatment system, comprising:
a microwave chamber configured to receive an object;
a plasma chamber operatively connected to the microwave chamber;
a supply of solvent gas in selective fluid communication with the plasma chamber;
a magnetron configured to emit microwave radiation;
a waveguide operatively connected to the magnetron and configured to direct the microwave radiation into the plasma chamber to form a solvent gas plasma within the plasma chamber, the solvent gas plasma configured to dissolve surface contamination on the object; and
a movable nozzle device in fluid communication with the microwave chamber, the movable nozzle device being configured to direct the solvent gas plasma from the plasma chamber into the microwave chamber toward the object.
6. The system of claim 5, further including a supply of surface treatment gas in selective communication with the plasma chamber, wherein the microwave radiation forms a surface treatment gas plasma from the surface treatment gas.
7. The system of claim 6, wherein the surface treatment gas plasma is configured for at least one of heat treating and depositing a coating on the object.
8. A method of surface treating, comprising:
supplying a solvent gas in a region adjacent to a surface of an object; and
directing microwave radiation into the solvent gas to excite the solvent gas to form a solvent gas plasma, the solvent gas plasma being configured to dissolve surface contamination on the object.
9. The method of claim 8, further including supplying a surface treatment gas in the region adjacent to the surface of the component and directing microwave radiation into the surface treatment gas to excite the surface treatment gas to form a surface treatment gas plasma.
10. The method of claim 9, further including supplying the surface treatment gas simultaneously with the solvent gas.
11. The method of claim 9, further including supplying the surface treatment gas after supplying the solvent gas.
12. The method of claim 9, further including at least one of heat treating and depositing a coating on the surface of the object using the surface treatment gas.
13. A method of surface treating, comprising:
placing an object within a microwave chamber;
supplying a solvent gas in a plasma chamber;
directing microwave radiation into the plasma chamber to excite the solvent gas to form a solvent gas plasma; and
directing the solvent gas plasma from the plasma chamber toward a surface of the object within the microwave chamber, the solvent gas plasma being configured to dissolve surface contamination on the object.
14. The method of claim 13, further including supplying a surface treatment gas in the plasma chamber, directing microwave radiation into the plasma chamber to excite the surface treatment gas to form a surface treatment gas plasma, and directing the surface treatment gas plasma from the plasma chamber toward the surface of the object.
15. The method of claim 14, further including supplying the surface treatment gas simultaneously with the solvent gas.
16. The method of claim 14, further including supplying the surface treatment gas after supplying the solvent gas.
17. The method of claim 14, further including at least one of heat treating and depositing a coating on the surface of the object using the surface treatment gas.
18. The method of claim 14, further including passing the surface treatment gas plasma through a movable nozzle to create a directed flow.
19. The method of claim 13, further including passing the solvent gas plasma through a movable nozzle to create a directed flow.
20. The method of claim 13, further including converting the solvent gas into a reactive state to dissolve surface contamination.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A time sequence control circuit for controlling a first voltage received by a power supply receiving terminal of a motherboard of a computer greater than a preset voltage before a signal control terminal on the motherboard receives a second voltage during turning on the computer, the control circuit comprising:
a control circuit connected to the power supply receiving terminal to receive the first voltage;
a delay circuit connected to the control circuit; and
a power conversion circuit connected between the delay circuit and the signal control terminal, to convert the first voltage into the second voltage;
wherein the control circuit comprises first and second diodes, and first and second electronic switches, anodes of the first and second diodes are connected to the power supply receiving terminal, a cathode of the first diode is grounded via first and second resistors connected in series, a cathode of the second diode is connected to the delay circuit, a first terminal of the first electronic switch is connected to a node between the first and second resistors, a second terminal of the first electronic switch is grounded, a third terminal of the first electronic switch is connected to a first terminal of the second electronic switch, and is also connected to the power supply receiving terminal via a third resistor, a second terminal of the second electronic switch is grounded, a third terminal of the second electronic switch is connected to the delay circuit; when the computer is turned on, the first voltage increases to the preset voltage, the first terminal of the first electronic switch is at high level, the first electronic switch is turned on, the first terminal of the second electronic switch is at a low level, and the second electronic switch is turned off; and wherein when the computer is turned on, the power supply receiving terminal increases to the preset voltage, the control circuit is turned off, the power conversion circuit converts the first voltage into the second voltage and provides the second voltage to the signal control terminal after delaying for a period of time.
2. The control circuit of claim 1, wherein the first and second electronic switches are npn bipolar junction transistors, and the first to third terminals of the first and second electronic switches are bases, emitters, and collectors of the npn bipolar junction transistors.
3. The control circuit of claim 1, wherein the third terminal of the first electronic switch is connected to the node between the first and second resistors via a fourth resistor.
4. The control circuit of claim 1, wherein the delay circuit comprises a fourth resistor and a capacitor, the fourth resistor is connected between the cathode of the second diode and the third terminal of the second electronic switch, and the capacitor is connected between the third terminal of the second electronic switch and ground.
5. The control circuit of claim 4, wherein the power conversion circuit comprises third to sixth electronic switches, a first terminal of the third electronic switch is connected to the third terminal of the second electronic switch via a fifth resistor, a second terminal of the third electronic switch is grounded, a third terminal of the third electronic switch is connected to a first terminal of the fourth electronic switch, and is also connected to the power supply receiving terminal via a sixth resistor, a second terminal of the fourth electronic switch is grounded, a third terminal of the fourth electronic switch is connected to the signal control terminal, a first terminal of the fifth electronic switch is connected to the third terminal of the second electronic switch, a second terminal of the fifth electronic switch is grounded, a third terminal of the fifth electronic switch is connected to the power supply receiving terminal via a seventh resistor, and is also connected to a first terminal of the sixth electronic switch via an eighth resistor, a second terminal of the sixth electronic switch is connected to the power supply receiving terminal, a third terminal of the sixth electronic switch is grounded via a ninth and a tenth resistors, a node between the ninth and tenth resistors is connected to the signal control terminal; wherein when the computer is turned on, the first voltage increases to the preset voltage, the third and fifth electronic switches are turned on after delayed for a period of time by the delay circuit, the first terminals of the fourth and sixth electronic switches are at low level, the fourth electronic switch is turned off, the sixth electronic switch is turned on, and the signal control terminal receives the second voltage.
6. The control circuit of claim 5, wherein the third and fifth electronic switches are re-channel metal oxide semiconductor field effect transistors (NMOSFETs), and the first to third terminals of the third and fifth electronic switches are gates, sources, and drains of the NMOSFETs, respectively.
7. The control circuit of claim 5, wherein the fourth and sixth electronic switches are npn and pnp bipolar junction transistors, respectively, and the first to third terminals of the fourth and sixth electronic switches are bases, emitters, and collectors of the npn and pnp bipolar junction transistors, respectively.
8. The control circuit of claim 1, wherein a maximum voltage of the first voltage is 3.3 volts.
9. The control circuit of claim 1, wherein the preset voltage is 2.7 volts.

1461109575-6ee86ea3-c7bf-4d61-ba98-5b6924eabb0a

1. A compound of formula I
51
wherein
m is 1,2 or 3;
X is O or a direct bond;
R1 is H; C1-6alkyl optionally substituted by OH, acyl, halogen, cycloalkyl, phenyl or hydroxy-phenylene; C2-6alkenyl; C2-6alkynyl; or phenyl optionally substituted by OH;
R2 is
52
wherein R5 is H or C1-4alkyl optionally substituted by 1, 2 or 3 halogen atoms, and R6 is H or C1-4alkyl optionally substituted by halogen;
each of R3 and R4, independently, is H, C1-4alkyl optionally substituted by halogen, or acyl, and
R is C13-20alkyl which may optionally have in the chain an oxygen atom and which may optionally be substituted by nitro, halogen, amino, hydroxy or carboxy; or a residue of formula (a)
53
wherein R7 is H, C1-4alkyl or C1-4alkoxy, and R8 is substituted C1-20alkanoyl, phenylC1-14alkyl wherein the C1-14alkyl is optionally substituted by halogen or OH, cycloalkylC1-14alkoxy or phenylC1-14alkoxy wherein the cycloalkyl or phenyl ring is optionally substituted by halogen, C1-4alkyl andor C1-4alkoxy, phenylC1-4alkoxyC1-4alkyl, phenoxyC1-14alkoxy or phenoxyC1-4alkyl,
R being also a residue of formula (a) wherein R8 is C1-14alkoxy when R1 is C1-4alkyl, C2-6alkenyl or C2-6alkynyl,
in free form or in salt form.
2. A compound according to claim 1, wherein R is a residue of formula (a).
3. A compound of formula X
54
wherein
n is 2,3 or 4
R1x is H; C1-6alkyl optionally substituted by OH, acyl, halogen, cycloalkyl, phenyl or hydroxy-phenylene; C2-6alkenyl; C2-6alkynyl; or phenyl optionally substituted by OH;
R2x is H, C1-4alkyl or acyl each of R3x and R4x, independently, is H, C1-4alkyl optionally substituted by halogen or acyl,
R5x is H, C1-4alkyl or C1-4alkoxy, and
R6x is C1-20alkanoyl substituted by cycloalkyl; cycloalkylC1-14alkoxy wherein the cycloalkyl ring is optionally substituted by halogen, C1-4alkyl andor C1-4alkoxy; phenylC1-14alkoxy wherein the phenyl ring is optionally substituted by halogen, C1-4alkyl andor C1-4alkoxy, R6x being also C4-14alkoxy when R1x is C3-4alkyl substituted by OH or pentyloxy or hexyloxy when R1x is C1-4alkyl, provided that R6x is other than phenyl-butylenoxy when either R5x is H or R1x is methyl, in free form or in salt form.
4. A compound according to claim 3 wherein n is 2.
5. A compound according to claim 3 wherein R6x is alkanoyl substituted by cycloalkyl; cycloalkylC1-14alkoxy wherein the cycloalkyl ring is optionally substituted by halogen, C1-4alkyl andor C1-4alkoxy; phenylC1-4alkoxy wherein the phenyl ring is optionally substituted by halogen, C1-4alkyl andor C1-4alkoxy.
6. A compound according to claim 1 which is selected from phosphoric acid mono-2-amino-2-hydroxymethyl-4-4-(5-phenyl-pentanoyl)-phenyl-butyl ester, phosphoric acid mono-2-amino-4-4-(5-cyclohexyl-pentanoyl)-phenyl-2-hydroxymethyl-butyl ester, phosphoric acid mono-2-amino-2-hydroxymethyl-4-4-(7-phenyl-heptanoyl)-phenyl-butyl ester, phosphoric acid mono-(R)-2-amino-4-3-methoxy-4-(4-phenyl-butoxy)-phenyl-2-methyl-butyl ester, phosphoric acid mono-(R)-2-amino-2-methyl-4-4-(5-phenyl-pentyloxy)-phenyl-butyl) ester and phosphoric acid mono-(R)-2-amino-4-(4-hexyloxy-phenyl)-2-methyl-butyl ester, or a salt thereof.
7. A compound according to claim 3 which is selected from (R)-2-Amino-2-ethyl-4-3-methoxy-4-(4-phenyl-butoxy)-phenyl-butan-1-ol, (R)-2-Amino-2-ethyl-4-3-methoxy-4-(4-phenyl-butoxy)-phenyl-butan-1-ol, (R)-2-Amino-2-methyl-4-4-(5-phenyl-pentyloxy)-phenyl-butan-1-ol, (R)-2-Amino-2-methyl-4-4-(3-phenyl-propoxy)-phenyl-butan-1-ol, (R)-2-Amino-4-4-(3-cyclohexyl-propoxy)-phenyl-2-methyl-butan-1-ol and 1-4-(3-Amino-4-hydroxy-3-hydroxymethyl-butyl)-phenyl-5-cyclohexyl-pentan-1-one, or a salt thereof.
8. A compound according to claim 1 or 3, in free form or in a pharmaceutically acceptable salt form for use as a pharmaceutical.
9. A pharmaceutical composition comprising a compound according to claim 1 or 3 in free form or pharmaceutically acceptable salt form in association with a pharmaceutically acceptable diluent or carrier therefor.
10. A method for preventing or treating disorders or diseases mediated by T lymphocytes, in a subject in need of such treatment, which method comprises administering to said subject an effective amount of a compound according to claim 1 or 3 or a pharmaceutically acceptable salt thereof;

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An electrosurgical device for tissue ablation, comprising:
a delivery cannula having a lumen and an open distal end in communication with the lumen; and
an electrode array deployable from, and retractable into, the cannula lumen through the open distal end, the electrode array comprising a plurality of tines, the tines having proximal ends secured to a mandrel carried in the cannula lumen, the mandrel movable axially relative to the cannula,
wherein the tines, when the electrode array is retracted into the cannula lumen, are nested in offset, circumferential layers about the mandrel.
2. The device of claim 1, the offset, circumferential layers including a first layer of tines and a second layer of tines overlaying the first layer, wherein the tines in the second layer are supported by respective edges of adjacent tines in the first layer.
3. The device of claim 1, comprising at least three offset, circumferential layers of tines.
4. The device of claim 1, wherein a pair of adjacent tines in a first layer have cross-sections comprising a base, first and second sides extending from opposing ends of and generally perpendicular to the base, and first and second shoulders extending at angles greater than 90\xb0 from respective ends of the first and second sides.
5. The device of claim 4, wherein the first and second shoulders meet, forming an angle of less than 180\xb0.
6. The device of claim 5, the first and second shoulders forming an angle of approximately 90\xb0.
7. The device of claim 5, the first and second shoulders forming an angle of less than 90\xb0.
8. The device of claim 4, wherein a tine in a second layer has first and second edges supported by respective shoulders of the adjacent tine pair.
9. The device of claim 8, the second layer tine having a cross-section substantially the same as the cross section of the adjacent first layer tines, but is nested in a reverse orientation.
10. The device of claim 4, wherein the first and second shoulders terminate at respective opposing ends of a top, the top being generally parallel to the base.
11. The device of claim 10, wherein a tine in a second layer has first and second edges supported by respective shoulders of the adjacent tine pair.
12. The device of claim 10, the second layer tine having a cross-section substantially the same as the cross section of the adjacent first layer tines, but is nested in a reverse orientation.
13. An electrosurgical device for tissue ablation, comprising:
a delivery cannula having a lumen and an open distal end in communication with the lumen; and
an electrode array deployable from, and retractable into, the cannula lumen through the open distal end, the electrode array comprising a plurality of tines, the tines having proximal ends secured to a mandrel carried in the cannula lumen, the mandrel movable axially relative to the cannula,
wherein the tines, when the electrode array is retracted into the cannula lumen, are nested in first and second circumferential layers about the mandrel, the first and second layers having a collective radial thickness less than twice a maximum radial thickness of any one tine.
14. The device of claim 13, wherein the tines in the first layer have cross-sections comprising a base, first and second sides extending from opposing ends of and generally perpendicular to the base, and first and second shoulders extending at angles greater than 90\xb0 from respective ends of the first and second sides.
15. The device of claim 14, wherein the tines in the second layer have first and second edges supported by respective shoulders of adjacent tines in the first layer.
16. The device of claim 14, wherein the tines in the second layer have cross-sections substantially the same as the first layer tines, but are nested in a reverse orientation.
17. The device of claim 14, wherein the first and second shoulders meet and form an angle of less than 180\xb0.
18. The device of claim 14, wherein the first and second shoulders meet and form an angle of approximately 90\xb0.
19. An electrosurgical device for tissue ablation, comprising:
a delivery cannula having a lumen and an open distal end in communication with the lumen; and
an electrode array deployable from, and retractable into, the cannula lumen through the open distal end, the electrode array comprising a plurality of tines, the tines having proximal ends secured to a mandrel carried in the cannula lumen, the mandrel movable axially relative to the cannula,
wherein the tines, when the electrode array is retracted into the cannula lumen, are nested in first and second circumferential layers about the mandrel, wherein the tines in the second layer are supported by respective edges of adjacent tines in the first layer, and wherein the first and second layers have a collective radial thickness less than twice a maximum radial thickness of any one tine.