1. An apparatus for establishing a connection through image recognition in a mobile terminal, the apparatus comprising:
an apparatus connector for determining a neighbor apparatus to which a user desires to connect by reading a corresponding image, and for establishing a connection with the determined neighbor apparatus.
2. The apparatus of claim 1, wherein the corresponding image comprises an image, obtained by the apparatus connector, of the neighbor apparatus with which the user desires to perform communication, and the apparatus connector determines the neighbor apparatus by reading the obtained image.
3. The apparatus of claim 2, wherein the image of the neighbor apparatus obtained by the apparatus connector comprises at least one of an image stored in advance, a directly captured image of the neighbor apparatus, and an image output to a viewfinder.
4. The apparatus of claim 1, wherein the apparatus connector obtains information required for establishing the connection with the determined neighbor apparatus from information stored in advance, and establishes the connection using the obtained information.
5. The apparatus of claim 4, wherein the information required for establishing the connection comprises at least one of a model name, an IDentifier (ID), and a connection address of the neighbor apparatus.
6. The apparatus of claim 5, wherein the information required for establishing the connection comprises one of information used for initial communication with the relevant apparatus and information regarding the relevant apparatus input by a user.
7. The apparatus of claim 1, wherein the apparatus connector determines if communication with the neighbor apparatus has been previously performed.
8. The apparatus of claim 7, wherein, if the apparatus connector determines that communication with the neighbor apparatus has not been previously performed, the apparatus connector determines information required for connection with the neighbor apparatus and stores the determined information.
9. A method for establishing a connection through image recognition in a mobile terminal, the method comprising:
determining a neighbor apparatus to which a user desires to connect by reading a corresponding image; and
establishing a connection with the determined neighbor apparatus.
10. The method of claim 9, wherein the determining of the neighbor apparatus to which the user desires to connect by reading the corresponding image comprises:
obtaining an image of the neighbor apparatus with which the user desires to perform communication; and
determining the neighbor apparatus by reading the obtained image.
11. The method of claim 10, wherein the obtaining of the image of the neighbor apparatus comprises obtaining at least one of an image stored in advance, a directly captured image of the neighbor apparatus, and an image output to a viewfinder.
12. The method of claim 9, wherein the establishing of the connection with the determined neighbor apparatus comprises:
obtaining information required for establishing the connection with the determined neighbor apparatus from information stored in advance; and
establishing the connection using the obtained information.
13. The method of claim 12, wherein the information required for establishing the connection comprises at least one of a model name, an IDentifier (ID), and a connection address of the neighbor apparatus.
14. The method of claim 12, wherein the information required for establishing the connection comprises one of information used for initial communication with the relevant apparatus and information regarding the relevant apparatus input by a user.
15. The method of claim 9, further comprising determining if communication with the neighbor apparatus has been previously performed.
16. The method of claim 15, further comprising determining information required for connection with the neighbor apparatus and stores the determined information, if the apparatus connector determines that communication with the neighbor apparatus has not been previously performed.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A power core for use in circuitized substrates, said power core comprising:
a first layer of a first low expansion dielectric material including first and second opposing sides and at least one opening extending there-through;
second and third layers of a second low expansion dielectric material different from said first low expansion dielectric material and positioned on said first and said second opposing sides of said first layer of low expansion dielectric material, respectively, and within said at least one opening;
first and second conductive layers positioned on said second and said third layers of said low expansion dielectric material, respectively, and not within said at least one opening; and
at least one thru hole positioned within said at least one opening and extending substantially from said first conductive layer to said second conductive layer.
2. The power core of claim 1 wherein said first low expansion dielectric material comprises thermosetting resin, fiberglass and a quantity of inorganic particulates.
3. The power core of claim 2 wherein said inorganic particulates each has a size within the range of about 0.10 mils to about 1.4 mils.
4. The power core of claim 3 wherein said inorganic particulates comprise silica, said silica occupying from about 3 to about 49 percent by weight of said thermosetting resin and said fiberglass cloth constitutes from about 35 to about 55 percent by weight of the resin.
5. The power core of claim 1 wherein said second low expansion dielectric material different from said first low expansion dielectric material comprises thermosetting resin and a quantity of inorganic particulates, said second low expansion dielectric material not including fiberglass cloth or the like therein.
6. The power core of claim 5 wherein said inorganic particulates of said second low expansion dielectric material each has a size within the range of about 0.10 mils to about 1.00 mil.
7. The power core of claim 6 wherein said inorganic particulates of said second low expansion dielectric material comprise silica constituting from about 30 to about 75 percent by weight of said thermosetting resin.
8. The power core of claim 1 wherein each of said first and said second conductive layers comprise copper or copper alloy material and are positioned on said second and third layers of said low expansion dielectric material, respectively, and not within said at least one opening.
9. The power core of claim 1 wherein said at least one thru hole positioned within said at least one opening includes at least one layer of copper or copper alloy material.
10. A circuitized substrate comprising:
a power core including a first layer of a first low expansion dielectric material including first and second opposing sides and at least one opening extending there-through;
second and third layers of a second, different low expansion dielectric material from said first low expansion dielectric material and positioned on said first and said second opposing sides of said first layer of low expansion dielectric material, respectively, and within said at least one opening, first and second conductive layers positioned on said second and third layers of said low expansion dielectric material, respectively, and not within said at least one opening, and at least one thru hole positioned within said at least one opening and electrically isolated from said first and said second conductive layers; and
a plurality of alternating layers of dielectric material and conductive material on at least one side of said power core and bonded thereto, selected ones of said layers of conductive material adapted for carrying electrical signals.
11. The circuitized substrate of claim 10 wherein said first low expansion dielectric material comprises thermosetting resin, fiberglass and a quantity of inorganic particulates.
12. The circuitized substrate of claim 11 wherein said inorganic particulates each has a size within the range of about 0.10 mils to about 1.4 mils.
13. The circuitized substrate of claim 11 wherein said inorganic particulates comprise silica constituting from about 3 to about 49 percent by weight of said thermosetting resin, and said fiberglass cloth constituting from about 35 to about 55 percent by weight of the resin.
14. The circuitized substrate of claim 10 wherein said second low expansion dielectric material different from said first low expansion dielectric material comprises thermosetting resin and a quantity of inorganic particulates, said second low expansion dielectric material not including fiberglass cloth or the like therein.
15. The circuitized substrate of claim 14 wherein said inorganic particulates of said second low expansion dielectric material each has a size within the range of about 0.10 mils to about 1.00 mil.
16. The circuitized substrate of claim 15 wherein said inorganic particulates of said second low expansion dielectric material comprise silica constituting from about 30 to about 75 percent by weight of said thermosetting resin.
17. The circuitized substrate of claim 10 wherein each of said first and said second conductive layers comprise copper or copper alloy material, and are positioned on said second and said third layers of said low expansion dielectric material, respectively, and not within said at least one opening.
18. The circuitized substrate of claim 10 wherein said at least one thru hole positioned within said at least one opening includes at least one layer of copper or copper alloy material.
19. The circuitized substrate of claim 10 wherein said alternating layers of dielectric material and conductive material comprise epoxy resin and copper or copper alloy, respectively.
20. A method of making a power core for use in a circuitized substrate, the method comprising:
providing a first layer of a first low expansion dielectric material including first and second opposing sides;
forming at least one opening extending through said first layer of said first low expansion dielectric material from said first opposing side to said second opposing side;
positioning second and third layers of a second low expansion dielectric material different from said first low expansion dielectric material on said first and said second opposing sides of said first layer of low expansion dielectric material, respectively;
bonding said second and said third layers of said second low expansion dielectric material different from said first low expansion dielectric material to said first layer of said first low expansion dielectric material such that at least some of said second low expansion dielectric material of both of said second and said third layers extends within and substantially fills said at least one opening;
forming first and second conductive layers on said second and said third layers of said low expansion dielectric material, respectively, and not within said at least one opening; and
forming at least one thru hole within said at least one opening having said second low expansion dielectric material of both of said second and said third layers therein.
21. The method of claim 20 wherein said forming of said at least one opening extending through said first layer of said first low expansion dielectric material from said first opposing side to said second opposing side is accomplished using at least one of the group: a laser, and a mechanical drill.
22. The method of claim 20 wherein said bonding said second and said third layers of said second low expansion dielectric material different from said first low expansion dielectric material to said first layer of said first low expansion dielectric material such that at least some of said second low expansion dielectric material of both said second and said third layers extends within and substantially fills said at least one opening is accomplished using lamination.
23. The method of claim 22 wherein said lamination is accomplished at temperatures of from about 180 degrees C. to about 230 degrees C. and at pressures within the range of about 200 PSI to 1000 PSI.
24. The method of claim 20 wherein said forming of said first and said second conductive layers on said second and third layers of said low expansion dielectric material, respectively, is accomplished prior to said bonding of said second and said third layers of said second low expansion dielectric material different from said first low expansion dielectric material to said first layer of said first low expansion dielectric material.
25. The method of claim 24 wherein said first and second conductive layers are formed on said second and third layers of said low expansion dielectric material, respectively, by coating.
26. The method of claim 20 wherein said forming of said at least one thru hole within said at least one opening within said first layer of said first low expansion dielectric material having said second low expansion dielectric material of both of said second and said third layers therein is accomplished by forming at least one opening within said second low expansion dielectric material of both of said second and said third layers within said at least one opening within said first layer of said first low expansion dielectric material and then forming a layer of conductive material on said at least one opening within said second low expansion dielectric material of both of said second and said third layers within said at least one opening within said first layer of said first low expansion dielectric material.
27. The method of claim 26 wherein said forming of said at least one opening within said second low expansion dielectric material of both said second and said third layers within said at least one opening within said first layer of said first low expansion dielectric material is accomplished using a laser.
28. The method of claim 27 wherein said forming said layer of conductive material on said at least one opening within said second low expansion dielectric material of both said second and said third layers within said at least one opening within said first layer of said first low expansion dielectric material is accomplished using electroplating.
29. The method of claim 20 further including bonding a plurality of alternating layers of dielectric material and conductive material on at least one side of said power core to form a circuitized substrate.