1. A method for configuring a user-programmable control device for integration of an intelligent electrical field device into a control or automation system having a flexibly expandable hardware structure, comprising:
storing a system specification description on a system configuration tool, wherein the system specification description defines a data interchange from the system configuration tool to a device configuration tool in accordance with a defined communications protocol;
providing a configuration device description, which defines the data interchange from the device configuration tool to an intelligent electrical field device in accordance with a defined communications protocol for the device configuration tool;
producing device configuration data in the device configuration tool from the configuration device description and a system configuration description provided by the system configuration tool;
creating project-specific libraries of logical node types for the user-programmable control device using an editing program which is implemented as a logical node type editor;
selecting a previously created library using a controller configuration tool; and
producing a device-specific configuration descriptions for the control or automation system, which form a prescribed set of logical node types for the control or automation system and which are provided for further processing.
2. The method according to claim 1, wherein the data interchange from the device configuration tool to the electrical field device and from the system configuration tool to the device configuration tool is performed in accordance with an IEC 61850 standard.
3. A method for configuring a user-programmable control device for integration of an intelligent electrical field device (IED) into a control or automation system having a flexibly expandable hardware structure, comprising:
creating a configuration of the control or automation system using a device configuration tool and a system configuration tool;
storing a system specification description (SSD) on the system configuration tool, which defines the data interchange from the system configuration tool to the device configuration tool in accordance with a defined communications protocol;
providing a configuration device description (CID) for the device configuration tool, which defines data interchange from the device configuration tool to an electrical field device (IED) in accordance with a defined communications protocol;
producing device configuration data in the device configuration tool from the configuration device description (CID) and a system configuration description (SCD) provided by the system configuration tool;
creating project-specific libraries of logical node types for the user-programmable control device using an editing program which is implemented as a logical node type editor;
selecting previously created project-specific libraries using a controller configuration tool; and
producing device-specific configuration descriptions (ICD) for the control or automation system, which form a firmly prescribed set of logical node types for the control or automation system and which are provided for further processing.
4. The method according to claim 1, wherein the data interchange from the device configuration tool to the electrical field device and from the system configuration tool to the device configuration tool is performed in accordance with an IEC 61850 standard.
5. An arrangement for configuring a user-programmable control device for integration of an intelligent field device into a control or automation system having a flexibly expandable hardware structure comprising:
a device configuration tool for providing a configuration description file which defines data interchange from the device configuration tool to an electrical field device in accordance with a defined communications protocol;
a system configuration tool for storing a system specification description, which defines data interchange from the system configuration tool to the device configuration tool in accordance with a defined communications protocol, wherein the device configuration tool is configured for producing device configuration data from a configuration device description and a system configuration description provided by the system configuration tool;
an editing program, which is implemented as a logical node type editor, for creating project-specific libraries of logical node types for the user-programmable control device; and
a controller configuration tool for selecting previously created project-specific libraries, and for producing device-specific configuration descriptions for the control or automation system, which correspond to a firmly prescribed set of logical node types for the control or automation system and which are available for further processing.
6. The arrangement according to claim 3, wherein the data interchange from the device configuration tool to the electrical field device and from the system configuration tool to the device configuration tool is performed in accordance with an IEC 61850 standard.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An ion implanter for implanting ions into a target substrate, comprising:
an ion source;
an ion beam extraction assembly for extracting ions from the ion source and forming a beam of extracted ions, the ion beam extraction assembly including therein a steering electrode having first and second electrically isolated electrode members defining therebetween a steering electrode aperture through which said ion beam may pass, and a voltage generator for applying a first voltage to said first electrode member and a second voltage to said second electrode member, the ion beam being controllably deflected in dependence upon the difference between said first and second voltages;
said ion source comprising an arc chamber in which ions are formed, said arc chamber having a front face including an exit aperture through which ions can be extracted from the said arc chamber, said front face defining a first electrode, said steering electrode being adjacent the first electrode;
a substrate holder downstream of the ion beam extraction assembly, for holding the target substrate; and
a deflection monitor, arranged between the extraction assembly and the substrate holder, for monitoring the deflection of said ion beam, said monitor comprising:
first and second electrically conductive surfaces, said first and second surface being adjacent and electrically isolated from one another, and defining an aperture therebetween to permit passage of at least a part of said ion beam in use; and
a current monitor for measuring the difference between a current generated upon said first surface by a part of said ion beam and the current generated upon said second surface by another part of said ion beam, said current difference being indicative of the degree of deflection of said ion beam.
2. An implanter as claimed in claim 1, further comprising a controller arranged to receive a signal representative of the current difference measured by said current measurement means, the controller controlling the difference between said first and second voltages to adjust the deflection of said ion beam in dependence upon said received signal.
3. An implanter as claimed in claim 1, further comprising a third apertured electrode adjacent said steering electrode and a fourth apertured electrode adjacent said third electrode, said first, steering, third and fourth electrodes being electrically insulated from one another.
4. An ion implanter as claimed in any of claim 1, in which the voltage generator is arranged to generate first and second voltages each of which includes a DC component to produce a static electric field between the said first and second electrode members, wherein the ion beam is deflected by a fixed angle.
5. An implanter as claimed in claim 4, in which the voltage generator is further arranged to generate first and second voltages each of which also include an AC component, to produce an oscillating transverse electric field as well as the said static electric field between the said first and second electrode members, wherein the ions within said ion beam are caused to oscillate substantially transversely to a longitudinal axis of the said ion beam to increase the current generated upon at least one of said first and second electrically conductive surfaces of said deflecting monitor.
6. An ion implanter as claimed in claim 1, further comprising an ion mass selector between said ion beam extraction assembly and said substrate holder, for selecting ions of a desired mass in said ion beam to be implanted into said target substrate.
7. An ion implanter as claimed in claim 1, in which the first and second electrically conductive surfaces constitute respective halves of a baffle downstream of the ion beam extraction assembly.
8. An ion implanter as claimed in claim 7, further comprising an ion mass selector between said ion beam extraction assembly and said substrate holder, for selecting ions of a desired mass in said ion beam to be implanted into said target substrate, wherein the ion mass selector defines an entrance and wherein the baffle is mounted adjacent said entrance.
9. An ion implanter comprising:
an ion source having an arc chamber; an electrode assembly for extracting ions from the arc chamber and forming a steerable beam of the extracted ions, the electrode assembly including therein a steering electrode having first and second electrically separate electrode members defining therebetween an aperture through which the ions may pass;
and a voltage generator providing a first DC voltage to the first electrode member and providing a second DC voltage to the second electrode member, a difference between the first and second DC voltages generating a static electric field across the aperture,
whereby the ion beam may be steered by an amount related to the said voltage difference.
10. A method of steering a beam of ions extracted by an extraction assembly from the arc chamber of an ion source in an ion implanter, the method comprising the steps of:
electrostatically deflecting the ions in the extraction assembly transversely of the beam direction at a deflection position where the ions experience an accelerating or decelerating field in the beam direction, thereby angularly steering the direction of said beam;
directing said ion beam through an aperture between first and second electrically conductive surfaces each arranged downstream of said deflection position, said first and second surfaces being electrically isolated from one another;
measuring the difference between a current generated upon said first surface as it is struck by a part of said ion beam, and the current generated upon said second surface as it is struck by another part of said ion beam, whereby said current difference is indicative of the degree of deflection of said ion beam; and
selectively adjusting the amount of electrostatic deflection of the ions until the difference between the current generated upon said first surface and the current generated upon said second surface, becomes substantially zero.
11. A method of steering an ion beam in an ion beam extraction assembly for the ion source arc chamber of an ion implanter, the ion beam extraction assembly including therein a steering electrode comprising first and second electrically isolated electrode members defining therebetween an aperture through which ions in the said ion beam may pass, the method comprising the steps of:
applying a first DC voltage to the first electrode member; and
applying a second DC voltage to the second electrode member;
whereby a difference between said first and second DC voltages causes a static electric field to be generated transversely of said aperture between said first and second electrode members, such that the ions are electrostatically deflected through an angle related to the said DC voltage difference.
12. An ion implanter for implanting ions into a target substrate, comprising:
an ion source;
an ion beam extraction assembly for extracting ions from the ion source and forming a beam of extracted ions, the extraction assembly including a steering electrode having first and second electrically isolated electrode members defining therebetween a steering electrode aperture through which said ion beam may pass, and a voltage generator for applying a first voltage to said first electrode member and a second voltage to said second electrode member, the ion beam being controllably deflected in dependence upon the difference between said first and second voltages;
a substrate holder downstream of the ion beam extraction assembly, for holding the said target substrate; and
a deflection monitor, arranged between the extraction assembly and the substrate holder, for monitoring the deflection of said ion beam, said monitor comprising:
first and second electrically conductive surfaces, said first and second surface being adjacent and electrically isolated from one another, and defining an aperture therebetween to permit passage of at least a part of said ion beam in use; and
current measurement means, for measuring the difference between a current generated upon said first surface by a part of said ion beam and the current generated upon said second surface by another part of said ion beam, said current difference being indicative of the degree of deflection of said ion beam;
wherein the voltage generator is arranged to generate first and second voltages, each of which includes a DC component to produce a static electrode field between the said first and second electrode members to deflect the ion beam by a fixed angle, and an AC component, to produce an oscillating transverse electric field as well as said static electric field to cause the ions within said ion beam to oscillate substantially transversely to a longitudinal axis of the said ion beam to increase the current generated upon at least one of said first and second electrically conductive surfaces of said deflecting monitor.
13. An ion implanter for implanting ions into a target substrate, comprising:
an ion source;
an ion beam extraction assembly for extracting ions from the ion source and forming a beam of extracted ions, the ion beam extraction assembly including therein a steering electrode having first and second electrically isolated electrode members defining therebetween a steering electrode aperture through which said ion beam may pass, and a voltage generator for applying a first voltage to said first electrode member and a second voltage to said second electrode member, the ion beam being controllably deflected in dependence upon the difference between said first and second voltages; a substrate holder downstream of the ion beam extraction assembly, for holding the target substrate;
an ion beam mass selector between said ion beam extraction assembly and said substrate holder, for selecting ions of a desired mass in said ion beam to be implanted into said target substrate; and a deflection monitor, arranged between the extraction assembly and the substrate holder, for monitoring the deflection of said ion beam, said monitor comprising:
first and second electrically conductive surfaces, said first and second surfaces being adjacent and electrically isolated from one another, and defining an aperture therebetween to permit passage of at least a part of said ion beam in use; and
a current monitor for measuring the difference between a current generated upon said first surface by a part of said ion beam and a current generated upon said second surface by another part of said ion beam, said current difference being indicative of the degree of deflection of said ion beam.