All The Claims

What is claimed is:

1. A method for forming a multi-level interconnection structure in a semiconductor device, said method comprising the steps of:
forming first level interconnections overlying a substrate;
consecutively forming first and second dielectric films on said first level interconnections;
consecutively forming first through third mask films on said second dielectric film, said first through third hard mask films being insulating films and having different etching rates in an etching condition;
selectively etching said second and third hard mask films to form a through-hole pattern on said second and third hard mask films;
selectively etching said third hard mask film to form a trench pattern on said third hard mask film, said trench pattern partially overlapping said through-hole pattern;
selectively etching said first hard mask film by using said second hard mask film as an etching mask to form said through-hole pattern on said first hard mask film;
selectively etching said second dielectric film by using said first hard mask film as an etching mask to form first through-holes in said second dielectric film based on said through-hole pattern;
selectively etching said first and second hard mask films and a top portion of said first dielectric film by using said third hard mask film as an etching mask to form trenches in said first and second hard mask films and said top portion of said second dielectric film based on said trench pattern; and
selectively etching said first dielectric film to form therein second through-holes communicated with respective said first through-holes for exposing part of said first level interconnections through said first and second through-holes.
2. The method as defined in claim 1, wherein said second dielectric film has a three-layer structure including a first low-permittivity layer, an etch stop layer and a second low-permittivity layer consecutively formed on said first dielectric film.
3. The method as defined in claim 2, wherein said trenches have a bottom surface implemented by a top surface of said etch stop layer.
4. The method as defined in claim 1, wherein said second dielectric film has a two-layer structure including an etch stop layer and a low-permittivity layer overlying said etch stop layer.
5. The method as defined in claim 4, wherein said trenches have a bottom surface implemented by a top surface of said etch stop layer.
6. The method as defined in claim 1, wherein said first hard mask film is made of a material same as a material of said first dielectric film.
7. The method as defined in claim 1, further comprising the step of forming a first anti-reflection film on top of said third hard mask film.
8. The method as defined in claim 7, further comprising, between said selectively etching step of said second and third hard mask films and said selectively etching step of said third hard mask film, the steps of removing said first anti-reflection film and forming a second anti-reflection film on said third hard mask film,.
9. The method as defined in claim 1, wherein said first dielectric film is an anti-diffusion film for suppressing diffusion of said first level interconnections.
10. The method as defined in claim 1, wherein said first level interconnections, said first hard mask film, said second hard mask film and said third hard mask film are made of Cu, SiC, SiO2 and SiN, respectively.
11. A semiconductor device comprising a substrate, first level interconnections overlying said substrate, first and second dielectric films consecutively formed on said first level interconnections, third through fifth dielectric films having different compositions from one another, said third through fifth dielectric films and at least a top portion of said second dielectric films defining interconnection trenches therein, said first through fifth dielectric films having through-holes penetrating therethrough, second level interconnections formed in said interconnection trenches, and via holes for filling said through-holes to connect said first level interconnections to said second level interconnections.
12. The semiconductor device as defined in claim 11, wherein said first dielectric film is an anti-diffusion film for suppressing diffusion of said first level interconnections.
13. The semiconductor device as defined in claim 11, wherein said first level interconnections, said third dielectric film, said fourth dielectric film and said fifth dielectric film are made of Cu. SiC, SiO2 and SiN, respectively.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. An isolated variant allele of a human orphanin FQnociceptin receptor gene, comprising a DNA sequence having at least one variation in SEQ ID NO:1, wherein said variation comprises G-46A, GIVS I 135C, GIVS I 250A, GIVS I 251A, C510T, CIVS III 67T, A804G, C1026T, C1126G, or any combination thereof.
2. The isolated variant allele of claim 1, detectably labeled.
3. The isolated variant allele of claim 2, wherein said detectable label comprises a radioactive element, a chemical which fluoresces, or an enzyme.
4. An isolated nucleic acid molecule selectively hybridizable to the isolated variant allele of claim 1.
5. The isolated nucleic acid molecule of claim 4, detectably labeled.
6. The isolated nucleic acid molecule of claim 5, wherein said detectable label comprises a radioactive element, a chemical that fluoresces, or an enzyme.
7. A cloning vector comprising an isolated variant allele of a human orphanin FQnociceptin receptor gene and an origin of replication, wherein said variant allele comprises a DNA sequence having at least one variation in SEQ ID NO:1, wherein said variation comprises G-46A, GIVS I 135C, GIVS I 250A, GIVS I 251A, C510T, CIVS III 67T, A804G, C1026T, C1126G, or any combination thereof.
8. A cloning vector comprising an origin of replication and an isolated nucleic acid molecule selectively hybridizable to an isolated variant allele of a human orphanin FQnociceptin receptor gene, wherein said variant allele comprises a DNA sequence having at least one variation in SEQ ID NO:1, wherein said at least one variation comprises G-46A, GIVS I 135C, GIVS I 250A, GIVS I 251A, C510T, CIVS III 67T, A804G, C1026T, C1126G, or any combination thereof.
9. The cloning vector of either of claim 7 or 8, wherein said cloning vector comprises of E. coli, bacteriophages, plasmids, or pUC plasmid derivatives.
10. The cloning vector of claim 9, wherein bacteriophages further comprise lambda derivatives, plasmids further comprise pBR322 derivatives, and pUC plasmid derivatives further comprise pGEX vectors, or pmal-c, pFLAG.
11. An expression vector comprising an isolated variant allele of a human orphanin FQnociceptin receptor gene comprising a DNA sequence having a variation in SEQ ID NO:1, wherein said variation comprises G-46A, GIVS I 135C, GIVS I 250A, GIVS I 251A, C510T, CIVS III 67T, A804G, C1026T, C1126G, or any combination thereof.
12. An expression vector comprising an isolated nucleic acid molecule selectively hybridizable to an isolated variant allele of a human orphanin FQnociceptin receptor gene, wherein said isolated nucleic acid molecule is operatively associated with a promoter, and said variant allele comprises a DNA sequence having at least one variation in SEQ ID NO:1, wherein said at least one variation comprises G-46A, GIVS I 135C, GIVS I 250A, GIVS I 251A, C510T, CIVS III 67T, A804G, C1026T, C1126G, or any combination thereof.
13. The expression vector of either of claim 11 or 12, wherein said promoter comprises immediate early promoters of hCMV, early promoters of SV40, early promoters of adenovirus, early promoters of vaccinia, early promoters of polyoma, late promoters of SV40, late promoters of adenovirus, late promoters of vaccinia, late promoters of polyoma, the lac the trp system, the TAC system, the TRC system, the major operator and promoter regions of phage lambda, control regions of fd coat protein, 3-phosphoglycerate kinase promoter, acid phosphatase promoter, or promoters of yeast a mating factor.
14. A unicellular host transformed or transfected with an expression vector comprising an isolated variant allele of a human orphanin FQnociceptin receptor gene operatively associated with a promoter, wherein said variant allele comprises a DNA sequence having at least one variation in SEQ ID NO:1, wherein said at least one variation comprises G-46A, GIVS I 135C, GIVS I 250A, GIVS I 251A, C510T, CIVS III 67T, A804G, C1026T, C1126G, or any combination thereof.
15. A unicellular host transformed with an expression vector comprising an isolated nucleic acid molecule selectively hybridizable to an isolated variant allele of a human orphanin FQnociceptin receptor gene, wherein said isolated nucleic acid molecule is operatively associated with a promoter, and said variant allele comprises a DNA sequence having at least one variation in SEQ ID NO:1, wherein said at least one variation comprises G-46A, GIVS I 135C, GIVS I 250A, GIVS I 251A, C510T, CIVS III 67T, A804G, C1026T, C1126G, or any combination thereof.
16. The unicellular host of either of claim 14 or 15, wherein said host comprises E. coli, Pseudomonas, Bacillus, Streptomyces, yeast, CHO, R1.1, B-W, L-M, COS1, COS7, BSC1, BSC40, BMT10 or Sf9 cells.
17. A method for determining a susceptibility in a subject to at least one physiological response, condition or disease related to the endogenous opioid system, nociception, neurotransmitter release (including dopamine, GABA, noradrenaline, and serotonin), anxiety and stre7ss, learning, memory and cognition, alcohol self-administration, behavioral sensitization to cocaine, drug addiction, opiate withdrawal and tolerance, food intake, immune function, cardiovascular function, renal function, gastrointestinal function, or motor function, comprising the steps of:
a) removing a bodily sample from said subject, wherein said sample comprises a first and second allele comprising a human orphanin FQnociceptin receptor gene;
b) determining whether said human orphanin FQnociceptin receptor gene of said first allele comprises a DNA sequence having at least one variation in SEQ ID NO:1, wherein said variation comprises G-46A, GIVS I 135C, GIVS I 250A, GIVS I 251A, C510T, CIVS III 67T, A804G, C1026T, C1126G, or any combination thereof, such that the presence of said at least one variation in said human orphanin FQnociceptin receptor gene of said first allele is expected to be indicative of the subject’s susceptibility to at least one said physiological response, condition or disease relative to the susceptibility to said at least one said physiological response, condition or disease in a standard.
18. The method for determining a susceptibility to at least one addictive disease of claim 17, further comprising the step of determining whether said human orphanin FQnociceptin receptor gene of said second allele comprises a DNA sequence having at least one variation in SEQ ID NO:1, wherein said variation comprises G-46A, GIVS I 135C, GIVS I 250A, GIVS I 251A, C510T, CIVS III 67T, A804G, C1026T, C1126G, or any combination thereof, such that the presence of said at least one variation in said human orphanin FQnociceptin receptor gene of said second allele is expected to be indicative of the subject’s susceptibility to said at least one physiological response, condition or disease relative to the susceptibility to said at least one physiological response, condition or disease in said standard.
19. The method of either of claim 19 wherein said at least one addictive disease comprises opioid addiction; cocaine addiction or addiction to other psychostimulants; nicotine addiction; barbituate or sedative hypnotic addiction; anxiolytic addiction; or alcohol addiction.
20. A method for determining a susceptibility to pain in a subject relative to a susceptibility of pain in a standard, wherein the method comprises the steps of:
a) removing a bodily sample from said subject, wherein said sample comprises a first and second allele comprising a human orphanin FQnociceptin receptor gene;
b) determining whether said human orphanin FQnociceptin receptor gene of said first allele comprises a DNA sequence having at least one variation in SEQ ID NO:1, wherein said variation comprises G-46A, GIVS I 135C, GIVS I 250A, GIVS I 251A, C510T, CIVS III 67T, A804G, C1026T, C1126G, or any combination thereof, such that the presence of said at least one variation in said human orphanin FQnociceptin receptor gene of said first allele is expected to be indicative of susceptibility to pain in said subject relative to susceptibility to pain in said standard, wherein said first allele of said standard comprises a human orphanin FQnociceptin receptor gene comprising a DNA sequence of SEQ ID NO:1.
21. The method of claim 20 for determining a susceptibility to pain in a subject, further comprising the step of determining whether said second allele of said bodily sample comprises a human orphanin FQnociceptin receptor gene comprising a DNA sequence having at least one variation in SEQ ID NO:1, wherein said variation comprises G-46A, GIVS I 135C, GIVS I 250A, GIVS I 251A, C510T, CIVS III 67T, A804G, C1026T, C1126G, or any combination thereof, such that the presence of said at least one variation in said second allele is expected to be indicative of susceptibility to pain in said subject relative to susceptibility of pain in said standard, wherein said second allele of said standard comprises a human orphanin FQnociceptin receptor gene comprising a DNA sequence of SEQ ID NO:1.
22. A method for determining a therapeutically effective amount of pain reliever to administer to a subject in order to induce analgesia in said subject relative to a therapeutically effective amount of pain reliever to administer to a standard in order to induce analgesia in said standard, wherein the method comprises determining a susceptibility to pain in said subject relative to susceptibility to pain in said standard, wherein susceptibility to pain in said subject is expected to be indicative of said therapeutically effective amount of pain reliever to administer to said subject to induce analgesia in said subject relative to said therapeutically effective amount of pain reliever to administer to said standard to induce analgesia in said standard.
23. The method of claim 22 for determining a therapeutically effective amount of pain reliever to administer to said subject, wherein determining susceptibility to pain in said subject comprises the steps of:
a) removing a bodily sample from said subject, wherein said sample comprises a first and second allele comprising a human orphanin FQnociceptin receptor gene; and
b) determining whether said first allele comprises a human orphanin FQnociceptin receptor gene comprising a DNA sequence having at least one variation in SEQ ID NO:1, wherein said at least one variation comprises G-46A, GIVS I 135C, GIVS I 250A, GIVS I 251A, C510T, CIVS II 67T, A804G, C1026T, C1126G, or any combination thereof, wherein the presence of said at least one variation in said human orphanin FQnociceptin receptor gene of said first allele is expected to be indicative of the subject’s susceptibility to pain relative to said to susceptibility of pain in said standard, wherein said first allele of said standard comprises a human orphanin FQnociceptin receptor gene comprising a DNA sequence of SEQ ID NO:1, such that said therapeutically effective amount of pain reliever to administer to the subject in order to induce analgesia is related to said susceptibility to pain in said subject relative to susceptibility to pain in said standard.
24. The method of claim 23, wherein determining susceptibility to pain in said subject relative to susceptibility to pain in said standard further comprises the step of determining whether said second allele of said bodily sample from said subject comprises a human orphanin FQnociceptin receptor gene comprising a DNA sequence having at least one variation in SEQ ID NO:1, wherein said at least one variation comprises G-46A, GIVS I 135C, GIVS I 250A, GIVS I 251A, C510T, CIVS III 67T, A804G, C 1026T, C1126G, or any combination thereof, such that the presence of said at least one variation in said second allele is expected to be indicative of susceptibility to pain in said subject relative to susceptibility to pain in said standard, wherein said second allele of said standard comprises a human orphanin FQnociceptin receptor gene comprising a DNA sequence of SEQ ID NO:1, and the therapeutically effective amount of pain reliever to administer to said subject to induce analgesia in said subject is related to the presence of said at least one variation in said human orphanin FQnociceptin receptor gene of said second allele of said bodily sample from said subject.
25. A method for determining a therapeutically effective amount of therapeutic agent to administer to a subject suffering from at least one addictive disease to treat the at least one addictive disease in said subject relative to a therapeutically effective amount of therapeutic agent to administer to a standard suffering from the at least one addictive disease to treat the at least one addictive disease in said standard, wherein the method comprises the steps of:
a) removing a bodily sample from said subject, wherein said sample comprises a first and second allele comprising a human orphanin FQnociceptin receptor gene; and
b) determining whether said first allele comprises a human orphanin FQnociceptin receptor gene comprising a DNA sequence having at least one variation in SEQ ID NO:1, wherein said variation comprises G-46A, GIVS I 135C, GIVS I 250A, GIVS I 251A, C510T, CIVS III 67T, A804G, C1026T, C1126G, or any combination thereof,
wherein the presence of said at least one variation in said human orphanin FQnociceptin receptor gene of said first allele is expected to be indicative of the therapeutically effective amount of said therapeutic agent to administer to the subject to treat said at least one addictive disease in said subject relative to said therapeutically effective amount of said therapeutic agent to administer to said standard to treat said at least one addictive disease in said standard, wherein said first allele of said standard comprises a human orphanin FQnociceptin receptor gene comprising a DNA sequence of SEQ ID NO:1.
26. The method of claim 25 for determining a therapeutically effective amount of therapeutic agent to administer to a subject suffering from said at least one addictive disease to treat said at least one addictive disease, relative to said therapeutically effective amount of said therapeutic agent administered to said standard suffering from said at least one addictive disease to treat said at least one addictive disease in said standard, further comprising the step of determining whether said second allele of said bodily sample from said subject comprises a human orphanin FQnociceptin receptor gene comprising a DNA sequence having at least one variation in SEQ ID NO:1, wherein said variation comprises G-46A, GIVS I 135C, GIVS I 250A, GIVS I 251A, C510T, CIVS III 67T, A804G, C1026T, C1126G, or any combination thereof, such that the presence of said at least one variation in said second allele related to said therapeutically effective amount of said therapeutic agent administered to said subject to treat said at least one addictive disease in said subject relative to said therapeutically effective amount of said therapeutic agent to administer to said standard to treat said at least one addictive disease in said standard, wherein said second allele of said standard comprises a human orphanin FQnociceptin receptor gene comprising a DNA sequence of SEQIDNO:1.
27. The method of either of claim 25 or 26, wherein said at least one addictive disease comprises opioid addiction; cocaine addiction or addiction to other psychostimulants; nicotine addiction; barbiturate or sedative hypnotic addiction; anxiolytic addiction; or alcohol addiction.
28. A commercial test kit may for determining the presence of at least one variation in a human orphanin FQnociceptin receptor gene of an allele in a bodily sample taken from a subject, wherein the commercial test kit comprises:
a) PCR oligonucleotide primers suitable for detection of an allele comprising a human orphanin FQnociceptin receptor gene comprising a DNA sequence having at least one variation in SEQ ID NO:1 comprising G-46A, GIVS I 135C, GIVS I 250A, GIVS I 251A, C510T, CIVS III 67T, A804G, C1026T, C1126G, or any combination thereof;
b) other reagents; and
c) directions for use of the kit.
29. A nucleic acid comprising an intron of the human orphanin FQnociceptin receptor gene as set forth in SEQ ID No:2.
30. A nucleic acid as set forth in SEQ ID No:2.

1. Electronically controllable brake actuating system for automotive vehicles, comprising:
means for measuring fluid pressure exerted by a pressure fluid,
means for measuring volume change of the pressure fluid,
a hydraulic arrangement including a piston-and-cylinder unit responsive to a pressure fluid pressure at an input thereto and in response to the pressure fluid pressure displaces a defined volume of pressure fluid and is interposed between a pressure source and an associated wheel brake and includes a pressure sensor arranged for sensing a pressure rise which is associated with the displaced volume of pressure fluid.
2. Electronically controllable brake actuating system as claimed in claim 1, wherein a valve assembly is provided in a first line that leads from the pressure source to the piston-and-cylinder unit and permits closing of the first line.
3. Electronically controllable brake actuating system as claimed in claim 2, further including a second line interposed between the valve assembly and the piston-and-cylinder unit wherein said second line communicates with a pressure fluid supply reservoir and a restrictor.
4. Device for detecting the presence of compressible fluid mixed with non-compressible fluid in the brake system of a vehicle, comprising:
a piston-and-cylinder unit interposed between a pressure source and an associated wheel brake, wherein said piston-and-cylinder unit is responsive to a pressure fluid pressure at an input thereto and in response to the pressure fluid pressure detects gases or air disposed in the system, by permitting the application of a defined pressure fluid volume to at least one wheel brake,
a pressure sensor arranged for sensing the pressure rise which is caused in the wheel brake by the effect of the pressure fluid volume, and
a valve assembly is provided in a line that leads from the pressure source to the piston-and-cylinder unit and permits closing of the line.
5. Electronically controllable brake actuating system for automotive vehicles, comprising:
a pressure source;
a valve assembly is provided in a first line that leads from the pressure source to a piston-and-cylinder unit wherein the piston is responsive to a pressure fluid pressure at an input to the piston-and-cylinder unit for determining hydraulic pressure to at least one wheel brake and wherein the valve assembly permits closing of the first line;
a pressure fluid supply reservoir in communication with a second line interposed between the valve assembly and the piston-and-cylinder unit;
wherein an amount of gases in the system is determined from a volume-pressure characteristic curve.
6. Electronically controllable brake actuating system as claimed in claim 5, further comprising a travel sensor for sensing an amount of travel of the piston.
7. Electronically controllable brake actuating system as claimed in claim 5, wherein said pressure fluid supply reservoir comprises a piston-type accumulator arranged in a reservoir filled with pressure fluid.
8. Electronically controllable brake actuating system as claimed in claim 7, wherein said piston-type accumulator includes supply bores that open into an unpressurized chamber contained in a sealed housing for preventing propagation of unwanted gases into the system.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An analog standard cell library comprising at least one analog standard cell family, said family:
defines an analog circuit function or portion thereof;
defines at least one variable analog circuit parameter of said analog circuit function; and
comprises a plurality of analog standard cells; wherein
each said analog standard cell:
comprises a physical design layout of said analog circuit function;
defines a cell height; and
defines a variation of said circuit parameter; wherein

all said analog standard cells:
have equal said cell height;
have different said physical design layout of said analog circuit function; and
have different said variation of said circuit parameter.
2. A general type analog standard cell whose generally planar layout defines a cell height and comprises:
a plurality of parallel and separated n-type poly fingers;
a plurality of parallel and separated p-type poly fingers;
an n-type diffusion adjacent to said n-type poly fingers;
a p-type diffusion adjacent to said p-type poly fingers; and
a plurality of conductive segments, wherein
said n-type poly fingers extend in both planar vertical directions beyond said n-type diffusion and said p-type poly fingers extend in both planar vertical directions beyond said p-type diffusion;
said n-type diffusion extends in both planar horizontal directions beyond said n-type poly fingers, and said p-type diffusion extends in both planar horizontal directions beyond said p-type poly fingers;
a first conductive segment is coupled to a first group of zero or more adjacent said n-type fingers;
a second conductive segment is coupled to a second group of said n-type fingers comprising all said n-type fingers not included in said first group;
a third conductive segment is coupled to a third group of zero or more adjacent said p-type fingers;
a fourth conductive segment is coupled to a fourth group of said p-type fingers comprising all p-type fingers not included in said third group;
fifth and sixth conductive segments are coupled to said n-type diffusion at locations adjacent to and only on opposite sides of each said n-type finger of said first group;
seventh and eighth conductive segments are coupled to said p-type diffusion at locations adjacent to and only on opposite sides of each said p-type finger of said third group;
a ninth conductive segment is coupled to said n-type diffusion at locations adjacent to each said n-type finger of said second group and not already coupled to either of said fifth or sixth conductive segments; and
a tenth conductive segment is coupled to said p-type diffusion at locations adjacent to each said p-type finger of said fourth group and not already coupled to either of said seventh or eighth conductive segments.
3. A sourcedrain-shared type analog standard cell whose generally planar layout defines a cell height and comprises:
a plurality of parallel and separated poly fingers;
a diffusion adjacent to said poly fingers;
a plurality of conductive segments, wherein
said poly fingers are all of the same doping type as each other and of the same doping type as said diffusion, said doping type either n-type or p-type;
said poly fingers extend in both planar vertical directions beyond said diffusion;
said diffusion extends in both planar horizontal directions beyond said poly fingers;
a first conductive segment is coupled to a first group of zero or more pairs of adjacent said fingers;
a second conductive segment is coupled to a second group of zero or more pairs of adjacent said fingers not included in said first group;
a third conductive segment is coupled to a third group of said fingers comprising all said fingers not included in said first and said second groups;
a fourth conductive segment is coupled to said diffusion at locations adjacent to and only on opposite sides of each said pair of fingers of said first group;
a fifth conductive segment is coupled to said diffusion at locations adjacent to and only between each said finger of each said pair of fingers of said first group;
a sixth conductive segment is coupled to said diffusion at locations adjacent to and only on opposite sides of each said pair of fingers of said second group; and
a seventh conductive segment is coupled to said diffusion at locations adjacent to and only between each said finger of each said pair of fingers of said second group;
4. An SoC physical design flow including at least one standard cell library of claim 1 and defining one or more layout rows, wherein
said layout rows each have a specified row height;
said standard cell library includes one or more analog standard cells and zero or more digital standard cells;
each said analog standard cell has cell height equal to one of said row heights or to an integer multiple thereof; and
each said digital standard cell has cell height equal to one of said row heights or to an integer multiple thereof; wherein
said SoC physical design flow can accept as input an SoC design description comprising either or both analog circuits and digital circuits; and
said SoC physical design flow performs the following tasks:
maps one or more said analog circuits, or portions thereof, to at least one of said analog standard cells andor said digital standard cells, and maps one or more said digital circuits, or portions thereof, to at least one of said digital standard cells andor said analog standard cells, said mapping occurring concurrently, serially, or in parallel;
places each said mapped analog standard cell, and places said said mapped digital standard cell, within a said layout row that has said row height equal to said cell height or across an integer number of adjacent said layout rows that has total height equal to said cell height, said placement occurring concurrently, serially, or in parallel; and
routes interconnect lines to and from said mapped analog standard cells, and routes interconnect lines to and from said mapped digital standard cells, said routing occurring concurrently, serially, or in parallel.
5. An SoC physical design flow including at least one standard cell library and defining one or more layout rows, wherein
said layout rows each have a specified row height;
said standard cell library includes at least one general type analog standard cell of claim 2 and zero or more digital standard cells;
each said general type analog standard cell has cell height equal to one of said row heights or to an integer multiple thereof; and
each said digital standard cell has cell height equal to one of said row heights or to an integer multiple thereof; wherein said SoC physical design flow can accept as input an SoC design description comprising either or both analog circuits and digital circuits; and
said SoC physical design flow performs the following tasks:
maps one or more said analog circuits, or portions thereof, to at least one of said general type analog standard cells andor said digital standard cells, and maps one or more said digital circuits, or portions thereof, to at least one of said digital standard cells andor said general type analog standard cells, said mapping occurring concurrently, serially, or in parallel;
places each said mapped general type analog standard cell, and places said said mapped digital standard cell, within a said layout row that has said row height equal to said cell height or across an integer number of adjacent said layout rows that has total height equal to said cell height, said placement occurring concurrently, serially, or in parallel; and
routes interconnect lines to and from said mapped general type analog standard cells, and routes interconnect lines to and from said mapped digital standard cells, said routing occurring concurrently, serially, or in parallel.
6. An SoC physical design flow including at least one standard cell library and defining one or more layout rows, wherein
said layout rows each have a specified row height;
said standard cell library includes at least one sourcedrain-shared type analog standard cell of claim 3 and zero or more digital standard cells;
each said sourcedrain-shared type analog standard cell has cell height equal to one of said row heights or to an integer multiple thereof; and
each said digital standard cell has cell height equal to one of said row heights or to an integer multiple thereof; wherein
said SoC physical design flow can accept as input an SoC design description comprising either or both analog circuits and digital circuits; and
said SoC physical design flow performs the following tasks:
maps one or more said analog circuits, or portions thereof, to at least one of said sourcedrain-shared type analog standard cells andor said digital standard cells, and maps one or more said digital circuits, or portions thereof, to at least one of said digital standard cells andor said sourcedrain-shared type analog standard cells, said mapping occurring concurrently, serially, or in parallel;
places each said mapped sourcedrain-shared type analog standard cell, and places said said mapped digital standard cell, within a said layout row that has said row height equal to said cell height or across an integer number of adjacent said layout rows that has total height equal to said cell height, said placement occurring concurrently, serially, or in parallel; and
routes interconnect lines to and from said mapped sourcedrain-shared type analog standard cells, and routes interconnect lines to and from said mapped digital standard cells, said routing occurring concurrently, serially, or in parallel.
7. The standard cell library of claim 1 comprising at least one general type analog standard cell of claim 2.
8. The standard cell library of claim 1 comprising at least one sourcedrain-shared type analog standard cell of claim 3
9. The standard cell library of claim 1 comprising at least one general type analog standard cell of claim 2 and at least one sourcedrain-shared type analog standard cell of claim 3.
10. The SoC physical design flow of claim 4 further comprising the library of claim 7.
11. The SoC physical design flow of claim 4 further comprising the library of claim 8.
12. The SoC physical design flow of claim 4 further comprising the library of claim 9.
13. The SoC physical design flow of claim 4 further comprising the library of claim 7 and the library of claim 8
14. The SoC physical design flow of claim 4 further comprising the library of claim 7 and the library of claim 9
15. The SoC physical design flow of claim 4 further comprising the library of claim 8 and the library of claim 9
16. The SoC physical design flow of claim 4 further comprising the library of claim 7, the library of claim 8, and the library of claim 9.