All The Claims

1. A magnetic braking motor system comprising:
a motor comprising:
a motor enclosure; and
a motor shaft rotatably mounted with respect to the motor enclosure; and

a magnetic brake assembly comprising:
a rotating magnetic element mounted with respect to the motor shaft; and
a stationary magnetic element mounted with respect to the motor enclosure, wherein a magnetic field is provided between the rotating magnetic element and the stationary magnetic element.
2. The magnetic braking motor system of claim 1, wherein the motor has a rotational strength when the motor is turned on and wherein the motor rotational strength is larger than a strength of the magnetic field.
3. The magnetic braking motor system of claim 1, wherein at least one of the rotating magnetic element and the stationary magnetic element comprises at least one magnet portion.
4. The magnetic braking motor system of claim 3, wherein the at least one magnet portion is a permanent magnet.
5. The magnetic braking motor system of claim 4, wherein the permanent magnet is a rare earth permanent magnet.
6. The magnetic braking motor system of claim 3, wherein magnet portions are mounted with respect to the motor enclosure in a spaced-apart configuration so that a spacing between adjacent magnet portions is approximately equal.
7. The magnetic braking motor system of claim 1, wherein at least a portion of the rotating magnetic element is fabricated from a ferrous material and at least a portion of the stationary magnetic element is a permanent magnet.
8. The magnetic braking motor system of claim 7, wherein the rotating magnetic element comprises a central region and at least one leg that extends from the central region and wherein a quantity of the at least one leg is equal to a quantity of the at least one magnet portion.
9. The magnetic braking motor system of claim 7, wherein the motor further comprises an armature mounted with respect motor shaft and wherein an interaction between the armature and the stationary magnetic element causes the motor shaft to rotate with respect to the motor enclosure.
10. The magnetic braking motor system of claim 7, wherein the rotating magnetic element is fabricated from a plurality of pieces and wherein each of the pieces have a similar shape.
11. The magnetic braking motor system of claim 7, wherein the rotating magnetic element completes a magnetic field in the stationary magnetic element and the motor enclosure.
12. The magnetic braking motor system of claim 1, wherein at least a portion of the rotating magnetic element is a permanent magnet and at least a portion of the stationary magnetic element is fabricated from a ferrous material.
13. The magnetic braking motor system of claim 12, wherein the rotating magnetic element comprises a central region and at least one leg that extends from the central region and wherein at least a portion of each leg is the permanent magnet.
14. The magnetic braking motor system of claim 1, wherein the magnetic brake assembly is separate from the motor.
15. The magnetic braking motor system of claim 1, and further comprising a torque multiplying mechanism operably attached to at least one of the motor and the magnetic brake assembly, wherein the torque multiplying mechanism has an input shaft and an output shaft and wherein a torque provided by the input shaft is different than a torque provided by the output shaft.
16. The magnetic braking motor system of claim 1, wherein the magnetic brake assembly functions as a slip clutch for the motor.
17. A magnetic braking motor system comprising:
a motor comprising:
a motor enclosure; and
a motor shaft rotatably mounted with respect to the motor enclosure;

a torque multiplying mechanism having an input shaft and an output shaft, wherein a torque provided by the input shaft is different than a torque provided by the output shaft; and
a magnetic brake assembly comprising:
a rotating magnetic element mounted with respect to the motor shaft and the input shaft; and
a stationary magnetic element mounted with respect to the motor enclosure, wherein a magnetic field is provided between the rotating magnetic element and the stationary magnetic element.
18. The magnetic braking motor system of claim 17, wherein the motor has a rotational strength when the motor is turned on and wherein the motor rotational strength is larger than a strength of the magnetic field.
19. The magnetic braking motor system of claim 17, wherein at least one of the rotating magnetic element and the stationary magnetic element comprises at least one magnet portion.
20. The magnetic braking motor system of claim 19, wherein the at least one magnet portion is a permanent magnet.
21. The magnetic braking motor system of claim 17, wherein at least a portion of the rotating magnetic element is fabricated from a ferrous material and at least a portion of the stationary magnetic element is a permanent magnet, wherein the rotating magnetic element comprises a central region and at least one leg that extends from the central region and wherein a quantity of the at least one leg is equal to a quantity of the at least one magnet portion.
22. The magnetic braking motor system of claim 17, wherein at least a portion of the rotating magnetic element is a permanent magnet and at least a portion of the stationary magnetic element is fabricated from a ferrous material and wherein the rotating magnetic element comprises a central region and at least one leg that extends from the central region and wherein at least a portion of each leg is the permanent magnet.
23. The magnetic braking motor system of claim 17, wherein the torque multiplying mechanism has a ratio of between about 50:1 and about 250:1.
24. A motorized cover system for a vehicle having an upwardly directed opening, wherein the motorized cover system comprises:
a cover material that is capable of covering at least a portion of the upwardly directed opening;
a cover material shaft operably attached to the cover material, wherein the cover material is rolled onto the cover material shaft when moving from an extended configuration to a retracted configuration;
a motor comprising:
a motor enclosure; and
a motor shaft rotatably mounted with respect to the motor enclosure, wherein the motor shaft is operably attached to the cover material shaft; and

a magnetic brake assembly comprising:
a rotating magnetic element mounted with respect to the motor shaft; and
a stationary magnetic element mounted with respect to the motor enclosure, wherein a magnetic field is provided between the rotating magnetic element and the stationary magnetic element.
25. The motorized cover system of claim 24, and further comprising an arm assembly that is operably attached the motor to the vehicle.
26. The motorized cover system of claim 24, wherein the motor has a rotational strength when the motor is turned on and wherein the motor rotational strength is larger than a strength of the magnetic field.
27. The motorized cover system of claim 24, wherein at least one of the rotating magnetic element and the stationary magnetic element comprises at least one magnet portion.
28. The motorized cover system of claim 27, wherein the at least one magnet portion is a permanent magnet.
29. The motorized cover system of claim 24, wherein at least a portion of the rotating magnetic element is fabricated from a ferrous material and at least a portion of the stationary magnetic element is a permanent magnet, wherein the rotating magnetic element comprises a central region and at least one leg that extends from the central region and wherein a quantity of the at least one leg is equal to a quantity of the at least one magnet portion.
30. The motorized cover system of claim 24, wherein at least a portion of the rotating magnetic element is a permanent magnet and at least a portion of the stationary magnetic element is fabricated from a ferrous material and wherein the rotating magnetic element comprises a central region and at least one leg that extends from the central region and wherein at least a portion of each leg is the permanent magnet.
31. The motorized cover system of claim 24, and further comprising a torque multiplying mechanism operably attached to at least one of the motor and the magnetic brake assembly, wherein the torque multiplying mechanism has an input shaft and an output shaft and wherein a torque provided by the input shaft is different than a torque provided by the output shaft.
32. A method of using a magnetic brake comprising:
providing a motor comprising a motor enclosure in which a motor shaft is rotatably mounted; and
preventing rotation of the motor shaft with respect to the motor enclosure with a magnetic brake assembly, wherein the magnetic brake assembly comprises a rotating magnetic element and a stationary magnetic element, wherein the rotating magnetic element is mounted with respect to the motor shaft, wherein the stationary magnetic element is mounted with respect to the motor enclosure and wherein a magnetic field is provided between the rotating magnetic element and the stationary magnetic element.
33. The method of claim 32, wherein the motor has a rotational strength when the motor is turned on and wherein the motor rotational strength is larger than a strength of the magnetic field.
34. The method of claim 32, wherein at least one of the rotating magnetic element and the stationary magnetic element comprises at least one magnet portion and wherein the at least one magnet portion is a permanent magnet.
35. The method of claim 34, and further comprising:
mounting the at least one magnet portion with respect to the motor enclosure;
forming the rotating magnetic element with a central region and at least one leg that extends from the central region; and
providing the at least one leg with a quantity is equal to a quantity of the at least one magnet portion.
36. The method of claim 34, and further comprising:
mounting the at least one magnet portion with respect to the motor shaft; and
fabricating at least a portion of the motor enclosure from a ferrous material.
37. The method of claim 32, and further comprising operably attaching a torque multiplying mechanism to at least one of the motor and the magnetic brake assembly, wherein the torque multiplying mechanism has an input shaft and an output shaft and wherein a torque provided by the input shaft is different than a torque provided by the output shaft.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for forming a power device, comprising:
forming an epitaxial layer on a substrate material;
selectively removing a portion of the epitaxial layer to form a column extending from the substrate material, the column having a sidewall;
forming an insulation material on the sidewall of the column; and
diffusing a dopant into the sidewall of the column via the insulation material.
2. The method of claim 1 wherein:
forming an epitaxial layer includes forming an n-type epitaxial layer on an n-type substrate material;
the insulating material is a first insulation material having a first thickness;
the method further includes forming a second insulation material onto an exposed surface of the column, the second insulation material having a second thickness greater than the first thickness, wherein the first and second insulation materials include at least one of silicon dioxide, spin-on glass, and flowable oxide;
selectively removing a portion of the epitaxial layer includes:
depositing a photoresist onto the second insulation material;
patterning the deposited photoresist to form an opening in the photoresist;
removing material from the second insulation material and the epitaxial layer via the opening; and

diffusing a dopant includes:
depositing a polysilicon material on the first and second insulation materials, the polysilicon being doped with a p-type dopant; and
diffusing the p-type dopant of the polysilicon into the sidewall of the column via the first insulation material while the second insulation material prevents the p-type dopant from diffusing into the surface of the column.
3. The method of claim 1 wherein forming an insulation material includes forming silicon dioxide on the sidewall of the column via thermal oxidation.
4. The method of claim 1 wherein forming an insulation material includes forming silicon dioxide on the sidewall of the column via thermal oxidation, the silicon dioxide having a thickness of about 50 to about 150 Angstroms.
5. The method of claim 1 wherein diffusing a dopant includes:
depositing a doping material on the insulation material, the doping material carrying a dopant; and
diffusing the dopant carried by the doping material into the sidewall of the column via the insulation material.
6. The method of claim 1 wherein diffusing a dopant includes:
depositing a polysilicon material on the insulation material, the polysilicon material being doped with a p-type dopant; and
diffusing the p-type dopant carried by the polysilicon material into the sidewall of the column via the insulation material.
7. The method of claim 1 wherein:
the insulating material is a first insulation material;
the method further includes forming a second insulation material onto an exposed surface of the column;
diffusing a dopant includes:
depositing a doping material on the insulation material, the doping material carrying a dopant; and
diffusing the dopant carried by the doping material into the sidewall of the column via the first insulation material while the second insulation material prevents the dopant from diffusing into the surface of the column.
8. The method of claim 1 wherein:
the insulating material is a first insulation material;
the method further includes forming a second insulation material onto an exposed surface of the column;
diffusing a dopant includes:
depositing a polysilicon material on the insulation material, the polysilicon material being doped with a p-type dopant; and
diffusing the p-type dopant carried by the polysilicon material into the sidewall of the column via the first insulation material while the second insulation material prevents the p-type dopant from diffusing into the surface of the column.
9. The method of claim 1 wherein:
the insulating material is a first insulation material;
the method further includes forming a second insulation material onto an exposed surface of the column;
diffusing a dopant includes:
depositing a polysilicon material on the insulation material, the polysilicon material being doped with a p-type dopant;
diffusing a first portion of the p-type dopant into the sidewall of the column and a second portion of the p-type dopant into the substrate material via the first insulation material while the second insulation material prevents the p-type dopant from diffusing into the surface of the column; and

the method further includes selectively etching the substrate material to remove at least a part of the second portion of the p-type dopant.
10. The method of claim 1 wherein forming an insulation material includes:
forming a first portion of the insulation material onto the sidewall of the column and a second portion onto a surface of the substrate material;
the method further includes:
depositing a barrier material onto the insulation material;
selectively removing a portion of the barrier material such that the second portion of the insulation material is exposed;

the method further includes increasing a thickness of the second portion of the insulation material;
diffusing a dopant includes diffusing the dopant into the sidewall of the column via the first portion of the insulation material while the second portion of the insulation material prevents the dopant from diffusing into the substrate material.
11. A method for forming a power device, comprising:
forming an epitaxial layer on a substrate material;
forming a trench in the epitaxial layer, the trench having a first sidewall, a second sidewall, and a bottom between the first and second sidewalls;
forming an insulation material on at least one of the first and second sidewalls of the trench; and
diffusing a dopant into the epitaxial layer via at least one of the first and second sidewalls of the trench via the insulation material.
12. The method of claim 11 wherein forming an insulation material includes forming at least one of silicon dioxide, spin-on glass, and flowable oxide on the first and second sidewalls.
13. The method of claim 11 wherein forming an insulation material includes forming at least one of silicon dioxide, spin-on glass, and flowable oxide on the first and second sidewalls, the insulation material having a thickness of about 50 to about 150 Angstroms.
14. The method of claim 11 wherein diffusing a dopant includes:
depositing a doping material on the insulation material, the doping material carrying a dopant; and
diffusing the dopant carried by the doping material into the epitaxial layer via the insulation material.
15. The method of claim 11 wherein diffusing a dopant includes:
depositing a polysilicon material on the insulation material, the polysilicon material being doped with a p-type dopant; and
diffusing the p-type dopant carried by the polysilicon material into epitaxial layer via the insulation material.
16. The method of claim 11 wherein:
the insulating material is a first insulation material;
the epitaxial layer has a first surface in direct contact with the substrate material;
the epitaxial layer has a second surface opposite the first surface;
the method further includes forming a second insulation material onto the second surface of the epitaxial layer;
diffusing a dopant includes:
depositing a doping material on the first and second insulation materials, the doping material carrying a dopant; and
diffusing the dopant carried by the doping material into the epitaxial layer via the first insulation material while the second insulation material prevents the dopant from diffusing into the second surface of the epitaxial layer.
17. The method of claim 1 wherein:
the insulating material is a first insulation material;
the epitaxial layer has a first surface in direct contact with the substrate material;
the epitaxial layer has a second surface opposite the first surface;
the method further includes forming a second insulation material onto the second surface of the epitaxial layer;
diffusing a dopant includes:
depositing a polysilicon material on the first and second insulation materials, the polysilicon material being doped with a p-type dopant; and
diffusing the p-type dopant carried by the polysilicon material into the epitaxial layer via the first insulation material while the second insulation material prevents the p-type dopant from diffusing into the second surface of the epitaxial layer.
18. A method for forming a power device, comprising:
forming an n-type column extending from a substrate material, the column having a first surface in direct contact with the substrate material, a second surface opposite the first surface, and a sidewall between the first and second surfaces;
introducing an insulation material onto the sidewall of the column; and
diffusing a dopant into the column via the introduced insulation material.
19. The method of claim 18 wherein:
the insulation material is a first insulation material;
the method further includes introducing a second insulation material onto the second surface of the column; and
the second insulation material having a thickness greater than that of the first insulation material.
20. The method of claim 18 wherein:
the insulation material is a first insulation material with a first composition; and
the method further includes introducing a second insulation material onto the second surface of the column, the second insulation material having a second composition that is generally the same as that of the first insulation material.
21. The method of claim 18 wherein:
the insulation material is a first insulation material with a first composition; and
the method further includes introducing a second insulation material onto the second surface of the column, the second insulation material having a second composition that is different than that of the first insulation material.
22. The method of claim 18 wherein:
the insulation material is a first insulation material having a first rate of diffusion; and
the method further includes introducing a second insulation material onto the second surface of the column, the second insulation material having a second rate of diffusion lower than that of the first insulation material.
23. A vertical power device, comprising:
a drain comprising a first semiconductor material of a first conductivity type;
a drift region proximate to the drain, the drift region comprising an n-type pillar, a p-type pillar, and an insulating region juxtaposed with one another;
a body comprising a second semiconductor material of a second conductivity type opposite to the first conductivity type, the body being separated from the drain by the drift region; and
a source region of the first conductivity type in the body and spaced apart from the drift region.
24. The vertical power device of claim 23 wherein the p-type pillar has a substantially uniform width.
25. The vertical power device of claim 23, further comprising a buffer region between the drain and the drift region.
26. The vertical power device of claim 23, further comprising a buffer region between the drain and the drift region, wherein the buffer region includes a semiconductor material of the first conductivity type.
27. The vertical power device of claim 23, further comprising a buffer region between the drain and the drift region, wherein the buffer region includes a semiconductor material of the first conductivity type and has a doping concentration that is at least one order of magnitude less than a doping concentration of the drain.

1. A noise reduction baffle for a fuel tank comprising:
a lower carrier; and
an upper sliding part configured to slide relatively to the lower carrier due to compression springs mounted on retainers,
wherein said lower carrier has a hollow foot including two vertical or inclined walls defining an open cavity of elongated shape having a longitudinal axis, said cavity including at least one rib making an angle with the longitudinal axis of the cavity, and
wherein the cavity of the foot of the baffle is configured to receive a flange moulded in the tank wall, and the rib inside the cavity is configured to be fitted in a slit of corresponding shape and size into the flange.
2. The noise reduction baffle according to claim 1, wherein the carrier and the sliding part are made of POM (poly-oxy-methylene).
3. The noise reduction baffle according to claim 1, wherein the springs are mounted on retainers formed respectively on the lower wall of the carrier and extend upwardly therefrom, and on retainers formed on the upper sliding part and which extend downwardly therefrom.
4. The noise reduction baffle according to claim 1, wherein the upper sliding part and the lower carrier are plane plates which both bear two portions in relief having a hollow space in the shape of a half cylinder, the half cylinders of one part facing those of the other part so that they define cavities where the compression springs are inserted, the bottom of each half cylindrical hollow space comprising a retainer for one extremity of a spring.
5. The noise reduction baffle according to claim 1, wherein the upper sliding part slides along one surface of the lower carrier, at least one of these parts comprising a slit where a corresponding pin on the other part can slide.
6. The noise reduction baffle according to claim 1, wherein both lateral sides of the upper sliding part are provided with folded edges which each receive a lateral side of the lower carrier.
7. The noise reduction baffle according to claim 1, wherein the carrier and the upper sliding part are provided with excavations andor ribs.
8. The noise reduction baffle according to claim 1, wherein the upper sliding part comprises a head.
9. A fuel tank equipped with a noise reduction baffle according to claim 1, said tank comprising a molded in flange with a slit, the baffle being secured in the tank with its foot on the flange and with its rib inside the slit of the flange.
10. The noise reduction baffle according to claim 1, wherein said baffle is mainly made of plastic and is equipped with at least one metallic part on its upper sliding part or on its lower carrier.
11. The noise reduction baffle according to claim 10, comprising three metallic parts: two on the lower carrier and one on the upper sliding part.
12. The noise reduction baffle according to claim 1, said baffle comprising several pairs of pinsslits and wherein one pinslit pair is a blocking pair and is equipped with portions in relief which cooperate to block the upper part against the lower carrier by compressing the springs, and with a tab at the pins extremity which eases the connectiondisconnection of the portions in relief to blockunblock the baffle which is in a folded position.
13. The noise reduction baffle according to claim 12, wherein the pin of the blocking pair comprises a free end equipped with a dome or a hook, and wherein said pin can slide into the entire slit which comprises a restriction through which the domed or hooked portion is forced.
14. The noise reduction baffle according to claim 12, wherein the pin of the blocking pair can only slide into the slit once the tab at the pins upper extremity has been and moved perpendicularly to the baffle so as to pass underneath the upper edge of the slit.
15. The noise reduction baffle according to claim 14, wherein the pin of the blocking pair has the shape of an elongated tongue cut into the part of the baffle where it is located while being flush with its surface, said tongue bearing a handle on its extremity, on the side opposed to the one bearing the tab.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of forming a solar cell device, comprising:
depositing a dielectric layer on a substrate;
patterning the dielectric layer to form a mask, thereby forming a pattern of exposed regions of the substrate;
disposing a first amount of a first dopant within the exposed regions of the substrate;
disposing a second amount of a second dopant within the exposed regions of the substrate, the dielectric layer, and the substrate below the dielectric layer after disposing the first dopant within the exposed regions, thereby forming a first doped region and a second doped region within the substrate, wherein the first dopant has a higher atomic mass than the second dopant; and
heating the substrate so that the first dopant diffuses a first depth within the substrate and the second dopant diffuses a second depth within the substrate, wherein the second depth of the second doped region is deeper than the first depth of the first doped region.
2. A method of forming a solar cell device, comprising:
forming a dielectric layer on a surface of a substrate;
removing a portion of the dielectric layer from the surface to expose a portion of the substrate;
disposing a first amount of a first dopant within a region of the substrate which is adjacent to the exposed portion of the substrate;
disposing a second amount of a second dopant within the region of the substrate; and
heating the substrate to cause the first dopant to diffuse a first depth within the substrate and the second dopant to diffuse a second depth within the substrate, wherein the second depth is greater than the first depth.
3. A method of forming a solar cell device, comprising:
positioning a physical mask over a surface of a substrate;
disposing a first dopant into a first region of the substrate through an opening formed in the physical mask;
disposing a second dopant into the region of the substrate through the opening formed in the physical mask; and
heating the substrate to form a second region and a third region, wherein the concentration of the first dopant in the second region is greater than the second dopant concentration, the concentration of the second dopant in the third region is greater than the first dopant concentration, and the second region is closer to the surface of the substrate than the third region.
4. A method of forming a solar cell device, comprising:
depositing a doped dielectric layer on a surface of a substrate, wherein the doped dilectric layer contains a first dopant material;
removing a first region of the doped dielectric layer from the surface to form an opening in the doped dielectric layer and thereby expose a first portion of the substrate;
disposing a second dopant material through the opening in the doped dielectric layer and within the first portion of the substrate which is adjacent to the surface of the substrate;
heating the substrate to cause the first dopant material and the second dopant material to diffuse into the substrate; and
removing a second region of the doped dielectric layer from the substrate to expose a second portion of the substrate.
5. A method of forming a solar cell device, comprising:
depositing a dielectric layer on a substrate;
patterning the dielectric layer to form a mask, thereby forming a pattern of exposed regions of the substrate;
disposing a first amount of a first dopant within the exposed regions of the substrate;
disposing a second amount of a second dopant within the exposed regions of the substrate and the dielectric layer after disposing the first dopant within the exposed regions, thereby forming a first doped region and a second doped region within the substrate, wherein the first dopant has a higher atomic mass than the second dopant; and
heating the substrate so that the first dopant diffuses a first depth within the substrate and the second dopant diffuses a second depth within the substrate, wherein the second depth of the second doped region is deeper than the first depth of the first doped region.
6. The method of claim 1, wherein the first dopant is an opposite doping type than the second dopant.
7. The method of claim 1, wherein the concentration of the first dopant near a surface is greater than about 1\xd71016 atomscm2.
8. The method of claim 1, wherein heating the substrate comprises heating the substrate to a temperature greater than about 800\xb0 C.
9. The method of claim 1, further comprising depositing a layer on a surface of the substrate, wherein the layer comprises a material selected from a group consisting of silicon nitride, silicon carbide, and aluminum oxide.
10. The method of claim 1, wherein the first dopant is arsenic (As) and the second dopant is phosporous (P) or boron (B).
11. The method of claim 1,
wherein the first and second doped regions have a similar profile.
12. The method of claim 1, wherein disposing the first amount of the first dopant or disposing the second amount of the second dopant within the region of the substrate comprises:
providing a gas containing a dopant material into a processing region of a plasma processing chamber;
generating a plasma in the processing region; and
biasing a substrate support to cause ions generated in the plasma to be disposed in the surface of the substrate.
13. The method of claim 11, wherein the first and second depth are deepest at a point below the exposed regions of the substrate.
14. The method of claim 2, wherein
disposing the first amount of the first dopant further comprises delivering the first dopant to the surface of the substrate at a first energy level; and
forming the dielectric layer further comprises forming a dielectric layer having a thickness large enough to substantially prevent the first dopant from being disposed in the surface of the substrate beneath the formed dielectric layer when the first dopant is delivered at the first energy level.
15. The method of claim 2, wherein the first dopant is an opposite doping type than the second dopant.
16. The method of claim 2, wherein the concentration of the first dopant in the exposed portion of the substrate is greater than about 1\xd71016 atomscm2.
17. The method of claim 2, wherein heating the substrate comprises heating the substrate to a temperature greater than about 800\xb0 C.
18. The method of claim 2, further comprising depositing a layer on the surface of the substrate, wherein the layer comprises a material selected from a group consisting of silicon nitride, silicon carbide, and aluminum oxide.
19. The method of claim 2, wherein the first dopant is arsenic (As) and the second dopant is phosporous (P) or boron (B).
20. The method of claim 3, wherein first dopant is an opposite doping type than the second dopant.
21. The method of claim 3, wherein the concentration of the first dopant in the exposed portion of the substrate is greater than about 1\xd71016 atomscm2.
22. The method of claim 3, wherein heating the substrate comprises heating the substrate to a temperature greater than about 800\xb0 C.
23. The method of claim 3, further comprising depositing a layer on the surface of the substrate, wherein the layer comprises a material selected from a group consisting of silicon nitride, silicon carbide, and aluminum oxide.
24. The method of claim 3, wherein the first dopant is arsenic (As) and the second dopant is phosporous (P) or boron (B).
25. The method of claim 4, wherein first dopant is an opposite doping type than the second dopant.
26. The method of claim 4, wherein the concentration of the first dopant in the first region of the substrate is greater than about 1\xd71016 atomscm2.
27. The method of claim 4, wherein heating the substrate comprises heating the substrate to a temperature greater than about 800\xb0 C.
28. The method of claim 4, further comprising depositing a layer on the surface of the substrate, wherein the layer comprises a material selected from a group consisting of silicon nitride, silicon carbide, and aluminum oxide.
29. The method of claim 4, wherein the first dopant is arsenic (As) and the second dopant is phosporous (P) or boron (B).
30. The method of claim 24, further comprising depositing a metal over the exposed first portion and the exposed second portion of the substrate.