1. A catalyst for preparing syndiotactic polystyrene comprising a titanocene complex I and an alkylaluminoxane II:
R1Ti(OR2R3)3\u2003\u2003I
wherein R1 is Cp or Cp containing 1-5 C1-4 alkyls;
R2 is an aryl containing 6-12 carbon atoms;
R3 is a halogen;
OR2R3 is a halogenated aryloxy ligand;
R4 is an alkyl containing 1-4 carbon atoms;
n is the oligomerization degree of the alkylaluminoxane II, the value of which is 6-40; and
the mole ratio of aluminum in alkylaluminoxane II to the titanocene complex I is 50-2000.
2. The catalyst of claim 1 wherein the value of the oligomerization degree of the alkylaluminoxane II n is 10-30.
3. The catalyst of claim 1 further comprising triisobutylaluminum, wherein the mole ratio of triisobutylaluminum to alkylaluminoxane II is 0.1-2.
4. The catalyst of claim 1 wherein R1 is Cp or pentamethyl Cp.
5. The catalyst of claim 1 wherein R1 is pentamethyl Cp.
6. The catalyst of claim 1 wherein R2 is alkaryl containing 6-12 carbon atoms.
7. The catalyst of claim 1 wherein R2 is phenyl, indenyl or biphenyl.
8. The catalyst of claim 1 wherein R2 is phenyl.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A composition comprising:
an organic silane material having a vinyl group or an acetylene group as a functional group for participating in a crosslinking reaction;
a crosslinking agent; and
a solvent for dissolving the organic silane material and the crosslinking agent,
wherein the organic silane material is a siloxane compound obtained by hydrolyzing and condensing at least one organic silane compound alone, or mixtures thereof, selected from the group consisting of compounds represented by Formulas 1 to 3 below:
SiX1X2X3X4 \u2003\u2003Formula 1
R1Si X1X2X3 \u2003\u2003Formula 2
R1R2Si X1X2 \u2003\u2003Formula 3
in Formulas 1 to 3, R 1 and R2 are each independently a hydrogen atom; a C1-10 alkyl group; a C3-10 cycloalkyl group; a C6-15 aryl group; a C2-30 alkyl group or a cycloalkyl group substituted with an acryloyl group, an acryloyloxy group or an epoxy group; a vinyl group; an allyl group; an acryloyloxy group; an epoxy group; or a C1-10 alkoxy group, at least one of which includes a vinyl group, or an acetylene group, and
X1,X2,X3 and X4 are each independently a halogen atom or a C1-10 alkoxy group, at least one of which is a hydrolysable functional group.
2. The composition as set forth in claim 1, wherein the crosslinking agent is represented by Formula 4 or 5 below:
in Formulas 4 or 5, R1, R2, R3, R4, R5, R6, R7 and R8 are each independently a hydrogen atom; a hydroxyl group; a C1-10 alkyl group; a C3-10 cycloalkyl group; a C6-15 aryl group; a C2-30 alkyl group or a cycloalkyl group substituted with an acryloyl group, an acryloyloxy group, an epoxy group or a hydroxyl group; a vinyl group; an ally group; an acryloyloxy group; an epoxy group; or a C1-10 alkoxy group, at least one of which include an acryl group,
a, b, c, and d are about 0 or a natural number such that a+b+c+d is about 2 or more,
n is about 1- about 5, and R1 and R2 are not identical to each other when n is larger than about 1, and
e, f, g, and h are about 0 or a natural number, such that e+f+g+h is about 2 or more.
3. The composition as set forth in claim 1, wherein the solvent is an aliphatic hydrocarbon solvent, an aromatic hydrocarbon solvent, a ketone-based solvent, an ether-based solvent, an acetate-based solvent, an alcohol-based solvent, an amide-based solvent, a silicon-based solvent, or mixtures thereof.
4. The composition as set forth in claim 1, wherein the crosslinking agent is used in an amount of about 0.001\u02dc about 100 parts by weight based on about 100 parts by weight of the organic silane material, and the solvent is used in an amount of about 20 wt %\u02dc about 99 wt % based on a total amount of the composition.
5. An organic insulator, including the composition of claim 1.
6. An organic thin film transistor, comprising a substrate, a gate electrode, an insulating layer, an organic semiconductor layer, and a plurality of pairs of sourcedrain electrodes, wherein the insulating layer is the organic insulator of claim 5.
7. An electronic device comprising the organic thin film transistor of claim 6.
8. A method of preparing an organic insulator, comprising applying the composition of claim 1 on a substrate and then curing the composition.
9. The method as set forth in claim 8, wherein applying the composition is performed through spin coating, dip coating, printing, spray coating, or roll coating.
10. The method as set forth in claim 8, wherein curing is performed using light or heat.
11. A method of fabricating an organic thin film transistor, comprising:
forming a gate electrode, an insulating layer, an organic semiconductor layer, and a plurality of pairs of sourcedrain electrodes on a substrate, wherein the insulating layer is the organic insulator prepared according to claim 8.
12. A method of fabricating an electronic device comprising fabricating the organic thin film transistor according to claim 11.