Author: claimsbot

1. A method of forming a terminal pad, comprising: providing an electrically conductive wire formed in a dielectric layer on a substrate, a top surface of said wire substantially coplanar with a top surface of said dielectric layer; forming a passivation layer on said top surface of said dielectric layer and said top surface of said wire, said passivation layer comprising a lower dielectric layer on said top surfaces of said dielectric layer and said wire, an intermediate dielectric layer on a top surface of said lower dielectric layer and an upper dielectric layer on a top surface of said intermediate dielectric layer; forming a trench in said passivation layer, said trench extending from a top surface of said passivation layer to a bottom surface of said passivation layer, said top surface of said wire exposed in said bottom of said trench;
forming a conformal and electrically conductive liner directly on sidewalls of said trench and in direct physical and electrical contact with said top surface of said wire exposed in said bottom of said trench; and
filling said trench with an electrical core conductor, a top surface of said core conductor, a top surface of said liner and a top surface of said passivation layer being substantially coplanar, said core conductor and said liner comprising said terminal pad.
2. The method of claim 1, wherein said passivation layer further includes a chemical-mechanical-polish etch stop layer formed on a top surface of said upper dielectric layer.
3. The method of claim 1, further including forming a ball-limiting-metallurgy pad on said top surface of said terminal pad and overlapping all sides of said terminal pad.
4. The method of claim 3, further including forming a solder bump on a top surface of said ball-limiting-metallurgy pad.
5. The method of claim 1, wherein a perimeter defined by all sides of said trench is aligned within a perimeter defined by all sides of said wire.
6. The method of claim 1, wherein said wire comprises copper and said core conductor comprises Al or AlCu alloy.
7. The method of claim 1, wherein: said lower dielectric layer comprises silicon nitride or silicon carbide nitride;
said intermediate dielectric layer comprises silicon dioxide; said upper dielectric layer comprises silicon nitride; said conductive liner comprises Ti, TiN, Ta, TaN, W or combinations thereof; and
said core conductor comprises Al or AlCu.
8. A structure, comprising:
an electrically conductive wire formed in a dielectric layer on a substrate, a top surface of said wire substantially coplanar with a top surface of said dielectric layer;
a passivation layer on said top surface of said dielectric layer and said top surface of said wire, said passivation layer comprising a lower dielectric layer on said top surfaces of said dielectric layer and said wire, an intermediate dielectric layer on a top surface of said lower dielectric layer and an upper dielectric layer on a top surface of said intermediate dielectric layer;
a trench in said passivation layer, said trench extending from a top surface of said passivation layer to said top surface of said wire;
a conformal and electrically conductive liner on sidewalls of said trench and in direct physical and electrical contact with said top surface of said wire contained within said trench; and
an electrical core conductor, a top surface of said core conductor, a top surface of said liner and a top surface of said passivation layer being substantially coplanar, said core conductor and said liner comprising a terminal pad.
9. The structure of claim 8, wherein said passivation layer further includes a chemical-mechanical-polish etch stop layer formed on a top surface of said upper dielectric layer.
10. The structure of claim 8, further including a ball-limiting-metallurgy pad on said top surface of said terminal pad and overlapping all sides of said terminal pad.
11. The structure of claim 10, further including a solder bump on a top surface of said ball-limiting-metallurgy pad.
12. The structure of claim 8, wherein a perimeter defined by all sides of said trench is aligned within a perimeter defined by all sides of said wire.
13. The structure of claim 8, wherein said wire comprises copper and said core conductor comprises Al or AlCu alloy.
14. The structure of claim 8, wherein:
said lower dielectric layer comprises silicon nitride or silicon carbide nitride;
said intermediate dielectric layer comprises silicon dioxide;
said upper dielectric layer comprises silicon nitride;
said conductive liner comprises Ti, TiN, Ta, TaN, W or combinations thereof; and
said core conductor comprises Al or AlCu.
15. A method of forming a terminal pad, comprising:
providing an electrically conductive wire formed in a dielectric layer on a substrate, a top surface of said wire substantially coplanar with a top surface of said dielectric layer;
forming an electrically conductive barrier layer on said top surface of said dielectric layer and said top surface of said wire;
forming an electrically conductive layer on a top surface of said conductive barrier layer;
subtractively removing regions of said conductive passivation layer and regions of said conductive layer to form said terminal pad;
forming a electrically non-conductive passivation layer on said top surface of said dielectric layer and all exposed surfaces of said terminal pad, said passivation layer comprising a lower dielectric layer on said top surface of said dielectric layer and on said all exposed surfaces of said terminal pad and an intermediate dielectric layer on a top surface of said lower dielectric layer; and
forming a via in said passivation layer, said via extending from a top surface of said passivation layer to a top surface of said terminal pad.
16. The method of claim 15, further including forming a ball-limiting-metallurgy pad covering all sidewalls of said via, said top surface of said terminal pad exposed in a bottom of said via and said ball-limiting-metallurgy pad overlapping all sides of via.
17. The method of claim 16, further including forming a solder bump on a top surface of said ball-limiting-metallurgy pad.
18. The method of claim 15, wherein a perimeter defined by all sides of said wire is aligned within a perimeter defined by all sides of said terminal pad.
19. The method of claim 15, wherein said wire comprises copper, said conductive barrier layer is a barrier layer for diffusion of copper and said conductive layer comprises Al or AlCu alloy.
20. The method of claim 15, wherein a perimeter defined by all sidewalls of said via is aligned within a perimeter defined by all sides of said ball-limiting-metallurgy pad.
21. The method of claim 15, wherein:
said lower dielectric layer comprises silicon dioxide;
said intermediate dielectric layer comprises silicon nitride;
said conductive barrier layer comprises Ti, TiN, Ta, TaN, W or combinations thereof; and
said conductive layer comprises Al or AlCu.
22. The method of claim 15, wherein said passivation layer further includes an upper electrically non-conductive layer on a top surface of said intermediate dielectric layer, said upper layer comprising polyimide or photosensitive polyimide.
23. A structure, comprising:
an electrically conductive wire formed in a dielectric layer on a substrate, a top surface of said wire substantially coplanar with a top surface of said dielectric layer;
an electrically conductive barrier layer on said top surface of said dielectric layer and said top surface of said wire;
a terminal pad comprising an electrically conductive layer on a top surface of an electrically conductive barrier layer, said terminal pad in physical and electrical contact with said wire;
an electrically non-conductive passivation layer on said top surface of said dielectric layer and all exposed surfaces of said terminal pad, said passivation layer comprising a lower dielectric layer on said top surface of said dielectric layer and said all exposed surfaces of said terminal pad and an intermediate dielectric layer on a top surface of said lower dielectric layer; and
a via in said passivation layer, said via extending from a top surface of said passivation layer to a top surface of said terminal pad.
24. The structure of claim 23, further including a ball-limiting-metallurgy pad covering all sidewalls of said via, said top surface of said terminal pad exposed in a bottom of said via and said ball-limiting-metallurgy pad overlapping all sides of said via.
25. The structure of claim 24, further including a solder bump on a top surface of said ball-limiting-metallurgy pad.
26. The structure of claim 23, wherein a perimeter defined by all sides of said wire is aligned within a perimeter defined by all sides of said terminal pad.
27. The structure of claim 23, wherein said wire comprises copper, said conductive barrier layer is a barrier layer to the diffusion of copper and said conductive layer comprises Al or AlCu alloy.
28. The structure of claim 23, wherein a perimeter defined by all sidewalls of said via is aligned within a perimeter defined by all sides of said ball-limiting-metallurgy pad.
29. The structure of claim 23, wherein:
said lower dielectric layer comprises silicon dioxide;
said intermediate dielectric layer comprises silicon nitride;
said conductive barrier layer comprises Ti, TiN, Ta, TaN, W or combinations thereof; and
said conductive layer comprises Al or AlCu.
30. The method of claim 23, wherein said passivation layer further includes an upper electrically non-conductive layer on a top surface of said intermediate dielectric layer, said upper layer comprising polyimide or photosensitive polyimide.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of treating abnormal cells in a mammal, comprising administering to the mammal an effective amount of a human Enterovirus-C (HEV-C) that binds to intercellular adhesion molecule-1 (ICAM-1) for infectivity of the abnormal cells and is thereby capable of infecting the abnormal cells whereby death of the cells is caused, wherein the abnormal cells are cancer cells, and further wherein the HEV-C is administered intravenously, intratumorally, intraperitoneally or intramuscularly.
2. The method of claim 1, wherein the HEV-C binds to both ICAM-1 and decay accelerating factor (DAF) for infectivity of the abnormal cells.
3. The method of claim 1, wherein expression of ICAM-1 is upregulated on the abnormal cells relative to normal said cells expressing their normal phenotype.
4. The method of claim 1, wherein expression of ICAM-1 is upregulated on the abnormal cells relative to cells of surrounding tissue in which the abnormal cells are found.
5. The method of claim 1, wherein the HEV-C is a Coxsackievirus.
6. The method of claim 1, wherein the HEV-C is a recombinant virus.
7. The method of claim 1, wherein the abnormal cells are cells of a malignancy selected from the group consisting of a malignancy of the skin, melanoma, multiple myeloma, head and neck cancer, prostate cancer, stomach cancer, breast cancer, gastric cancer, colorectal cancer, glioma, and colon cancer.
8. The method of claim 1, wherein the HEV-C is administered by injection.
9. The method of claim 1, wherein the HEV-C is administered to the mammal in a dosage greater than about 1\xd7102 plaque forming units per ml of inoculant.
10. The method of claim 9, wherein the HEV-C is administered to the mammal in a dosage of between about 1\xd7102 to 1\xd7101 plaque forming units per ml of the inoculant.

1. A power window apparatus with a pinch detecting function comprising:
a motor that opens and closes a window through a window driving mechanism;
a pulse generator that outputs pulse signals corresponding to a rotation of the motor;
a switch device that outputs switch signals to manually open and close the window; and
a control unit that generates control signals for controlling the motor according to the pulse signals and the switch signals,
wherein, when the window is operated to be closed by the switch device, the control unit determines whether a pinching occurs in the window, and when it is determined that the pinching occurs in the window, the control unit performs a process required for avoiding the pinching,
the control unit does not determine whether the pinching occurs in the window in a start cancellation period from the time when the motor is started to the time when the number of revolutions of the motor reaches a stable point,
the control unit includes a backlash-detecting member that detects a backlash of a driving system having the window driving mechanism, and determines whether a backlash over a predetermined value exists in the driving system on the basis of input from the backlash-detecting member,
when it is determined that the backlash over the predetermined value exists in the driving system, the control unit sets a termination time of the start cancellation period on the basis of the time when the peak of the number of revolutions of the motor is detected, and
when it is determined that the backlash over the predetermined value does not exist in the driving system, the time when the rate of change of the number of revolutions of the motor reaches a predetermined value or the time when the rate of change of the motor input ratio reaches a predetermined value is set to the termination time of the start cancellation period.
2. The power window apparatus with a pinch detecting function according to claim 1,
wherein, when the backlash over the predetermined value exists in the driving system, a period from the time when the peak of the number of revolutions of the motor is detected to the time when the number of revolutions of the motor reaches the stable point is obtained in advance, and the time passed from the detection of the peak of the number of revolutions of the motor to the previously obtained time is set as the termination time of the start cancellation period.
3. A power window apparatus with a pinch detecting function comprising:
a motor that opens and closes a window through a window driving mechanism;
a pulse generator that outputs pulse signals corresponding to a rotation of the motor;
a switch device that outputs switch signals to manually open and close the window; and
a control unit that generates control signals for controlling the motor according to the pulse signals and the switch signals,
wherein, when the window is operated to be closed by the switch device, the control unit determines whether a pinching occurs in the window, and when it is determined that the pinching occurs in the window, the control unit performs a process required for avoiding the pinching,
the control unit does not determine whether the pinching occurs in the window in a start cancellation period from the time when the motor is started to the time when the number of revolutions of the motor reaches a stable point,
the control unit computes a motor output ratio from the start time of the motor to determine whether a backlash over a predetermined value exists in a driving system including the window driving mechanism and the motor by comparing the computed output ratio with a predetermined threshold value of the output ratio obtained in advance, and detects the number of revolutions of the motor,
when it is determined that the computed output ratio of the motor is higher than the predetermined threshold value of the output ratio, the control unit determines that the backlash over the predetermined value exists in the driving system, and sets a termination time of the start cancellation period on the basis of the time when the peak of the number of revolutions of the motor is detected, and
when it is determined that the backlash over the predetermined value does not exist in the driving system, the time when the rate of change of the number of revolutions of the motor reaches a predetermined value or the time when the rate of change of a motor input ratio reaches a predetermined value is set to the termination time of the start cancellation period.
4. The power window apparatus with a pinch detecting function according to claim 3,
wherein the control unit varies the predetermined threshold value of the output ratio according to an input voltage value of the motor.
5. The power window apparatus with a pinch detecting function according to claim 3,
wherein, when the backlash over the predetermined value exists in the driving system, a period from the time when the peak of the number of revolutions of the motor is detected to the time when the number of revolutions of the motor reaches the stable point is obtained in advance, and the time passed from the detection of the peak of the number of revolutions of the motor to the previously obtained time is set as the termination time of the start cancellation period.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A crystal of pantothenate synthetase (PS) having a monoclinic space group P21 and unit cell dimensions of a66.00.2 , b78.10.2 , c77.10.2 and 103.70.2.
2. A crystal of PS having the three dimensional atomic coordinates of Table 1.
3. A method for crystallizing a selenium atom PS derivative which comprises producing PS by recombinant production in a bacterial host in the presence of selenomethionine, recovering a selenium atom PS derivative from the host and growing crystals from the recovered selenium atom PS derivative.
4. A method for identifying a potential inhibitor of PS comprising the steps of:
a. employing a three-dimensional structure of PS, or at least one sub-domain thereof, to characterise at least one PS active site, said three-dimensional structure being defined by atomic coordinate data according to Table 1; and
b. identifying said potential inhibitor by designing or selecting a compound for interaction with said active site.
5. A method according to claim 4, wherein step b. involves selecting said compound by computationally screening a database of compounds for interaction with said active site.
6. A method according to claim 4, comprising the further steps of:
c. obtaining or synthesising said potential inhibitor; and
d. contacting said potential inhibitor with PS to determine the ability of said potential inhibitor to interact with PS.
7. A method according to claim 6, wherein in step c. said potential inhibitor is contacted with PS in the presence of a substrate to determine the ability of said potential inhibitor to inhibit PS.
8. A method according to claim 4, comprising the further steps of:
c. obtaining or synthesising said potential inhibitor;
d. forming a complex of PS and said potential inhibitor; and
e. analysing said complex by X-ray crystallography to determine the ability of said potential inhibitor to interact with PS.
9. A compound identified as an inhibitor of PS by the method of claim 4.
10. A method of forming a potential inhibitor of PS comprising the steps of:
a. employing a three-dimensional structure of PS, or at least one sub-domain thereof, to characterise a plurality of PS active sites, said three-dimensional structure being defined by atomic coordinate data according to Table 1;
b. designing or selecting respective compounds for interaction with said active sites; and
c. forming said potential inhibitor by linking said respective compounds into a larger compound which maintains the relative positions and orientations of said respective compounds at said active sites.
11. A method according to claim 10, wherein step b. involves selecting said compounds by computationally screening a database of compounds for interaction with said active site.
12. A method according to claim 10, comprising the further steps of:
d. obtaining or synthesising said potential inhibitor; and
e. contacting said potential inhibitor with PS to determine the ability of said potential inhibitor to interact with PS.
13. A method according to claim 12, wherein in step d. said potential inhibitor is contacted with PS in the presence of a substrate to determine the ability of said potential inhibitor to inhibit PS.
14. A method according to claim 10, comprising the further steps of:
d. obtaining or synthesising said potential inhibitor;
e. forming a complex of PS and said potential inhibitor; and
f. analysing said complex by X-ray crystallography to determine the ability of said potential inhibitor to interact with PS.
15. A compound identified as an inhibitor of PS by the method of claim 10.
16. A method of analysing a PS-ligand complex comprising the steps of:
a. employing (i) X-ray crystallographic diffraction data from said PS-ligand complex and (ii) a three-dimensional structure of PS, or at least one sub-domain thereof, to generate a difference Fourier electron density map of the complex, the three-dimensional structure being defined by atomic coordinate data according to Table 1; and
b. analysing said difference Fourier electron density map.
17. A computer readable medium with atomic data according to Table 1 recorded thereon, said data defining the three-dimensional structure of PS or at least one sub-domain thereof.
18. A computer readable medium with structure factor data for PS recorded thereon, the structure factor data being derivable from the atomic coordinate data of Table 1.
19. A computer system containing atomic coordinate data according to Table 1, said data defining the three-dimensional structure of PS or at least one sub-domain thereof, and the system being intended to generate structures andor perform rational drug design for PS or PS ligand complexes.
20. A computer system containing structure factor data for PS, said structure factor data being derivable from the atomic coordinate data of Table 1, and the system being intended to generate structures andor perform rational drug design for PS or PS ligand complexes.