All The Claims

1. A mounting system for supporting equipment on an underlying surface, the mounting system comprising:
a base that is structured to secure to the underlying surface;
an extension section that includes one or more members, the extension section being connected to the base so as to extend a height from the underlying surface; and
a grasp section that is connected to a top section of the extension section and is structured to secure to a section of the equipment when the equipment is installed on the underlying surface.
2. The mounting system of claim 1, wherein the grasp section is pivotal about the extension section to enable angular adjustment of the section of the equipment that it secures.
3. The mounting system of claim 1, wherein the underlying surface is a rooftop, and wherein the base includes a foot that penetrates at least a section of the rooftop.
4. The mounting system of claim 3, wherein the base includes one or more flashing structures to deter water.
5. The mounting system of claim 1,
wherein the underlying surface is a rooftop, and wherein the base section includes a foot that penetrates at least a section of the rooftop, and
wherein the extension section includes a pipe that connects to the foot by a first type of securement.
6. The mounting system of claim 5, wherein the pipe is pivotally coupled to the grasp section.
7. The mounting system of claim 1,
wherein the underlying surface is a rooftop, and wherein the base section includes a foot that penetrates at least a section of the rooftop, and
wherein the extension section includes a pipe; and
wherein the mounting system further comprises a first wedged-shaped member and a second wedged-shaped member, the first wedged-shaped member extending from the foot, and the second wedged-shaped section being dimensioned to fit within the pipe, wherein the first wedged-shaped section and the second wedged-shaped section combine to secure the pipe to the foot.
8. The mounting system of claim 1,
wherein the underlying surface is a rooftop, and wherein the base section includes a foot that penetrates at least a section of the rooftop, and
wherein the extension section includes a pipe; and
wherein mounting system further comprises a star-shaped clamping sub-system to connect the pipe to the foot.
9. The mounting system of claim 8,
wherein the star-shaped clamping sub-system comprises a star shaped washer and a bolt, wherein the star-shaped washer is structured to mate with the bolt and to expand radially when mated with the bolt;
wherein the bolt is positioned to extend into the foot, and
wherein the star-shaped washer is dimensioned to (i) fit within the pipe until mated, and (ii) to retain the pipe securely with the foot when expanded radially from within the pipe.
10. The mounting system of claim 4, wherein the extension section includes a member on which a skirt is formed to divert water and to form a counter-flash with the one or more flashing structures of the base.
11. The mounting system of claim 1, wherein the extension section comprises a pipe and an adjustable support member, wherein the adjustable support member is pivotally connected to the pipe and is adjustable in a linear dimension to enable a section of the equipment that is being supported to be upwards or downwards.
12. The mounting system of claim 11, wherein the extension section comprises a top section and a bottom section that telescope in order to after the linear dimension.
13. An installed and mounted solar module system comprising:
a solar module array comprising a plurality of solar modules;
a mounting system for supporting the solar module array on an underlying surface, the mounting system providing a plurality of mounting points, wherein at one or more of the plurality of mounting points, the mounting system comprises:
a foot that is structured to secure to the underlying surface;
a pipe coupled to the base so as to extend a height from the underlying surface; and
a grasp that is coupled to a top section of pipe and is structured to secure to a section of the equipment when the equipment is installed on the underlying surface.
14. The installed system of claim 13, wherein the system is installed by adjusting one or more of (i) an angle of the grasp, or (ii) a dimension that the pipe extends from the underlying surface.
15. The installed system of claim 13, wherein the system is installed by first installing the mounting system, and then adjusting one or more components of the installed mounting system to receive the solar module array.
16. A mounting system for supporting solar module array on an underlying surface, the mounting system comprising:
a pipe that couples to a base, the base being provided on the underlying surface, wherein the pipe is coupled to extend a height from the underlying surface; and
a grasp section that is coupled to a top section of the pipe and is structured to secure to a section of the solar module array when the solar module array is installed on the underlying surface.
17. The system of claim 16, further comprising the base, wherein the base is installed into the underlying surface and includes one or more flashing features.
18. The system of claim 17, wherein the grasp section includes a skirt feature that forms a counter-flash for the one or more flashing features of the base.
19. The system of claim 17, wherein the pipe and the base provide or are coupled to a wedged-shaped sub-assembly for enabling the pipe and the base to be coupled to one another.
20. The system of claim 17, wherein the pipe and the base are coupled using a star-shaped washer.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method comprising:
forming a dielectric layer containing a lanthanum hafnium oxide layer, the lanthanum hafnium oxide layer formed using atomic layer deposition, wherein forming the lanthanum hafnium oxide layer using atomic layer deposition includes:
introducing a lanthanum-containing precursor to a substrate, introducing the lanthanum-containing precursor including pulsing at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor; and
introducing a hafnium-containing precursor to the substrate.
2. The method of claim 1, wherein forming a dielectric layer containing a lanthanum hafnium oxide layer includes forming the lanthanum hafnium oxide layer on a silicon oxide layer to form the dielectric layer as a dielectric stack.
3. The method of claim 1, wherein the method includes forming the dielectric layer as a gate insulator of a transistor in the integrated circuit.
4. The method of claim 1, wherein the method includes forming the dielectric layer as a gate insulator in a CMOS transistor in the integrated circuit.
5. The method of claim 1, wherein the method includes forming the dielectric layer as a dielectric of a capacitor in a dynamic random access memory.
6. The method of claim 1, wherein forming the dielectric layer includes forming the dielectric layer as a nanolaminate having the lanthanum hafnium oxide layer.
7. The method of claim 1, wherein forming the dielectric layer includes forming the dielectric layer as a nanolaminate having the lanthanum hafnium oxide layer and a lanthanide oxide layer.
8. The method of claim 1, wherein forming the dielectric layer includes forming the dielectric layer as a nanolaminate having the lanthanum hafnium oxide layer and a hafnium oxide layer.
9. The method of claim 1, wherein the method includes forming a transistor.
10. The method of claim 1, wherein the method includes forming a capacitor.
11. The method of claim 10, wherein forming a capacitor includes forming the dielectric layer as a dielectric of the capacitor formed in an analog integrated circuit.
12. The method of claim 10, wherein forming a capacitor includes forming the dielectric layer as a dielectric of the capacitor formed in a radio frequency integrated circuit.
13. The method of claim 10, wherein forming a capacitor includes forming the dielectric layer as a dielectric of the capacitor formed in a mixed signal integrated circuit.
14. The method of claim 1, wherein the method is a method of forming a memory device.
15. The method of claim 1, wherein the method is a method of forming an electronic system.
16. The method of claim 1, wherein introducing the lanthanum-containing precursor to a substrate and introducing a hafnium-containing precursor to the substrate are performed in a common atomic layer deposition cycle to form lanthanum hafnium oxide.
17. The method of claim 1, wherein introducing the lanthanum-containing precursor to a substrate and introducing a hafnium-containing precursor to the substrate are performed in different sequences in a common atomic layer deposition cycle to form lanthanum hafnium oxide.
18. The method of claim 1, wherein introducing the lanthanum-containing precursor to a substrate is performed in a lanthanum sequence, introducing a hafnium-containing precursor to the substrate is performed in a hafnium sequence, and an atomic layer deposition cycle to form lanthanum hafnium oxide includes a number of lanthanum sequences and a number of hafnium sequences with the number of lanthanum sequences different from the number of hafnium sequences.
19. A method comprising:
forming a dielectric layer containing a lanthanum hafnium oxide layer in an integrated circuit, the lanthanum hafnium oxide layer arranged as one or more monolayers, wherein forming the lanthanum hafnium oxide layer includes:
introducing a lanthanum-containing precursor to a substrate, wherein introducing the lanthanum-containing precursor includes pulsing at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor; and
introducing a hafnium-containing precursor to the substrate.
20. The method of claim 19, wherein forming the lanthanum hafnium oxide layer includes forming the lanthanum hafnium oxide by a self-limiting mechanism.
21. The method of claim 19, wherein introducing the lanthanum-containing precursor to a substrate and introducing a hafnium-containing precursor to the substrate are performed prior to introducing an oxidizing reactant precursor.
22. A method comprising:
forming a dielectric layer containing a lanthanum hafnium oxide layer in an integrated circuit, the lanthanum hafnium oxide layer arranged as one or more monolayers, wherein forming the lanthanum hafnium oxide layer includes:
introducing a lanthanum-containing precursor to a substrate, wherein introducing the lanthanum-containing precursor includes pulsing a La(C11H19O2)3CH3(OCH2CH2)4OCH3 precursor; and
introducing a hafnium-containing precursor to the substrate.
23. The method of claim 22, wherein forming the lanthanum hafnium oxide layer includes forming the lanthanum hafnium oxide by a self-limiting mechanism.
24. The method of claim 22, wherein the method includes forming the dielectric layer to include a layer of HfO2, a layer of La2O3, or layers of HfO2 and La2O3.
25. A method comprising:
forming a dielectric layer containing a lanthanum hafnium oxide layer in an integrated circuit, the lanthanum hafnium oxide layer arranged as one or more monolayers, wherein forming the lanthanum hafnium oxide layer includes:
introducing a lanthanum-containing precursor to a substrate, wherein introducing the lanthanum-containing precursor includes pulsing a La(C11H19O2)3 precursor; and
introducing a hafnium-containing precursor to the substrate.
26. The method of claim 25, wherein forming the lanthanum hafnium oxide layer includes forming the lanthanum hafnium oxide by a self-limiting mechanism.
27. The method of claim 25, wherein the method includes doping the lanthanum hafnium oxide layer with a lanthanide other than lanthanum.
28. A method comprising:
forming a memory array in a substrate including forming a dielectric layer containing a lanthanum hafnium oxide layer, the lanthanum hafnium oxide layer formed using atomic layer deposition, wherein forming the lanthanum hafnium oxide layer using atomic layer deposition includes:
pulsing a lanthanum-containing precursor to a substrate, pulsing the lanthanum-containing precursor includes pulsing at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor; and
pulsing a hafnium-containing precursor to the substrate; and

forming a connection to couple the memory array to a bus.
29. The method of claim 28, wherein pulsing a hafnium-containing precursor includes a hafnium halide precursor.
30. The method of claim 28, wherein the method is a method of forming a memory device including forming the dielectric layer as a gate insulator of a transistor in the memory device.
31. The method of claim 28, wherein the method is a method of forming a flash memory device including forming the dielectric layer as an inter-gate insulator of a floating gate transistor in the flash memory device.
32. The method of claim 28, wherein the method is a method of forming a memory device including forming the dielectric layer as a dielectric of a capacitor in the memory device.
33. The method of claim 28, wherein the method is a method of forming a dynamic random access memory.
34. The method of claim 28, wherein introducing the lanthanum-containing precursor to a substrate and introducing a hafnium-containing precursor to the substrate are performed in a common atomic layer deposition cycle to form lanthanum hafnium oxide.
35. The method of claim 28, wherein introducing the lanthanum-containing precursor to a substrate and introducing a hafnium-containing precursor to the substrate are performed in different sequences in a common atomic layer deposition cycle to form lanthanum hafnium oxide.
36. A method comprising:
forming a memory array in a substrate including forming a dielectric layer containing a lanthanum hafnium oxide layer in an integrated circuit, the lanthanum hafnium oxide layer arranged as one or more monolayers, wherein forming the lanthanum hafnium oxide layer includes:
pulsing a lanthanum-containing precursor to a substrate, wherein pulsing the lanthanum-containing precursor includes pulsing at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor; and
pulsing a hafnium-containing precursor to the substrate; and

forming a connection to couple the memory array to a bus.
37. The method of claim 36, wherein forming the lanthanum hafnium oxide layer includes forming the lanthanum hafnium oxide by a self-limiting mechanism.
38. The method of claim 36, wherein the method includes forming the dielectric layer as a nanolaminate dielectric in a NROM flash memory.
39. A method comprising:
forming a memory array in a substrate including forming a dielectric layer containing a lanthanum hafnium oxide layer in an integrated circuit, the lanthanum hafnium oxide layer arranged as one or more monolayers, wherein forming the lanthanum hafnium oxide layer includes:
pulsing a lanthanum-containing precursor to a substrate, wherein pulsing the lanthanum-containing precursor includes pulsing a La(C11H19O2)3CH3(OCH2CH2)4OCH3 precursor; and
pulsing a hafnium-containing precursor to the substrate; and

forming a connection to couple the memory array to a bus.
40. The method of claim 39, wherein forming the lanthanum hafnium oxide layer includes forming the lanthanum hafnium oxide by a self-limiting mechanism.
41. The method of claim 39, wherein forming the lanthanum hafnium oxide layer includes forming La2Hf2O7.
42. A method comprising:
providing a controller;
coupling an integrated circuit to the controller, wherein at least one of the integrated circuit or the controller includes a dielectric layer containing a lanthanum hafnium oxide layer, the lanthanum hafnium oxide layer formed using atomic layer deposition, wherein forming the lanthanum hafnium oxide layer using atomic layer deposition includes:
pulsing a lanthanum-containing precursor onto a substrate, pulsing the lanthanum-containing precursor including pulsing at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor; and
pulsing a hafnium-containing precursor onto the substrate.
43. The method of claim 42, wherein pulsing a hafnium-containing precursor includes pulsing a hafnium nitrate precursor.
44. The method of claim 42, wherein coupling an integrated circuit to the controller includes coupling a memory device as the integrated circuit.
45. The method of claim 42, wherein forming the dielectric layer includes forming the dielectric layer as a nanolaminate having the lanthanum hafnium oxide layer.
46. The method of claim 42, wherein forming the dielectric layer includes forming the dielectric layer as a nanolaminate having the lanthanum hafnium oxide layer and a lanthanide oxide layer.
47. The method of claim 42, wherein forming the dielectric layer includes forming the dielectric layer as a nanolaminate having the lanthanum hafnium oxide layer and a hafnium oxide layer.
48. The method of claim 42, wherein providing a controller includes providing a processor.
49. The method of claim 42, wherein coupling an integrated circuit to the controller includes coupling a mixed signal integrated circuit as the integrated circuit.
50. The method of claim 42, wherein the method includes forming an information handling system.
51. The method of claim 42, wherein introducing the lanthanum-containing precursor to a substrate and introducing a hafnium-containing precursor to the substrate are performed in a common atomic layer deposition cycle to form lanthanum hafnium oxide.
52. The method of claim 42, wherein introducing the lanthanum-containing precursor to a substrate and introducing a hafnium-containing precursor to the substrate are performed in different sequences in a common atomic layer deposition cycle to form lanthanum hafnium oxide.
53. A method comprising:
providing a controller;
coupling an integrated circuit to the controller, wherein at least one of the integrated circuit or the controller includes a dielectric layer containing a lanthanum hafnium oxide layer, the lanthanum hafnium oxide layer arranged as one or more monolayers, wherein forming the lanthanum hafnium oxide layer includes:
pulsing a lanthanum-containing precursor onto a substrate, wherein pulsing the lanthanum-containing precursor includes pulsing at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor; and
pulsing a hafnium-containing precursor onto the substrate.
54. The method of claim 53, wherein forming the lanthanum hafnium oxide layer includes forming the lanthanum hafnium oxide by a self-limiting mechanism.
55. The method of claim 53, wherein the method includes forming a wireless system.
56. A method comprising:
providing a controller;
coupling an integrated circuit to the controller, wherein at least one of the integrated circuit or the controller includes a dielectric layer containing a lanthanum hafnium oxide layer, the lanthanum hafnium oxide layer arranged as one or more monolavers, wherein forming the lanthanum hafnium oxide layer includes:
pulsing a lanthanum-containing precursor onto a substrate, wherein pulsing the lanthanum-containing precursor includes pulsing a La(C11H19O2)3CH3(OCH2CH2)4OCH3 precursor; and
pulsing a hafnium-containing precursor onto the substrate.
57. The method of claim 56, wherein forming the lanthanum hafnium oxide layer includes forming the lanthanum hafnium oxide by a self-limiting mechanism.
58. The method of claim 56, wherein the method includes forming an electro-optic system.

1. A seat structure for a passenger seat, the seat structure comprising:
a seat pan for mounting on a frame structure of the passenger seat in a manner such that the seat pan is moveable in forward and backward directions relative to the frame independently from movement of a seat back of the passenger seat; and
biasing means for biasing the seat pan in a default position.
2. The seat structure as claimed in claim 1, wherein in the default position, the seat pan is substantially in a maximum backward position.
3. The seat structure as claimed in claim 1 or 2, wherein the seat pan is movable on a curved trajectory along the forward and backward directions.
4. The seat structure as claimed in claim 3, wherein the curved trajectory comprises first and second opposing ends and an intermediate portion between the first and second ends, the intermediate portion being at a vertically lower position compared to the first and second ends.
5. The seat structure as claimed in any one of the preceding claims, wherein the seat pan is curved along a depth thereof.
6. The seat structure as claimed in any one of the preceding claims, wherein the seat pan comprises one or more rollers for engaging one or more a track strips mounted to the frame structure of the passenger seat.
7. The seat structure as claimed in any one of claims 1 to 5, wherein the seat pan comprises one or more track strips for engaging one or more rollers mounted to the frame structure of the passenger seat.
8. The seat structure as claimed in any one of the preceding claims, wherein the seat pan comprises one or more slider elements for being received in corresponding one or more guiding tracks mounted to the frame structure of the passenger seat.
9. The seat structure as claimed in any one of claims 1 to 7, wherein the seat pan comprises one or more guiding tracks for receiving one or more corresponding slider elements mounted to the frame structure of the passenger seat.
10. The seat structure as claimed in any one of the preceding claims, wherein the seat pan is corrugated.
11. The seat structure as claimed in claim 10, wherein the seat pan is corrugated along one or more directions thereof.
12. The seat structure as claimed in any one of the preceding claims, further comprising one or more retaining structures for limiting the movement of the seat pan.
13. The seat structure as claimed in claim 12, wherein each restraining structure comprises a first element on the seat pan for abutting a second element mounted to the frame structure of the passenger seat.
14. The seat structure as claimed in claim 13, wherein the biasing means comprises one or more biasing elements configured to about the respective first elements on the seat pan.
15. The seat structure as claimed in any one of the preceding claims, wherein the seat pan is further configured for receiving a force exerted by a seat back of the passenger seat for movement of the seat pan relative to the frame structure of the passenger seat.
16. The seat structure as claimed in claim 15, wherein the seat pan is configured to receive a pushing force exerted by the seat back.
17. The seat structure as claimed in claim 16, wherein the seat pan is configured to receive the pushing force as a result of reclining of the seat back.
18. The seat structure as claimed in any one of claims 15 to 17, wherein the seat pan comprises an interface structure disposed for receiving the force.
19. The seat structure as claimed in claim 18, wherein the interface structure comprises a substantially flat surface for receiving the force.
20. The seat structure as claimed in claim 18, wherein the interface structure comprises a surface with a recess formed therein for receiving the force.
21. The seat structure as claimed in any one of claims 18 to 20, wherein the interface structure is disposed at one end of the seat pan and extending substantially across a corrugation pattern of the seat pan.
22. The seat structure as claimed in any one of the preceding claims, wherein the seat pan is configured to be mounted to the frame structure by being disposed above and supported by a further seat pan mounted to the frame structure.
23. The seat structure as claimed in any one of the preceding claims, wherein the biasing means comprises one or more springs.
24. A seat structure for a passenger seat, the seat structure comprising:
a first seat pan for mounting to a frame structure of the passenger seat;
a second seat pan for disposing above the first seat pan such that the second seat pan is moveable relative to the first seat pan in forward and backward directions with reference to the frame structure.
25. The seat structure as claimed in claim 24, wherein the second seat pan is moveable relative to the first seat pan independent from movement of a seat back of the passenger seat.
26. The seat structure as claimed in claim 24 or 25, wherein the first seat pan or a guiding structure of the seat structure is configured for guiding the movement of the second seat pan on a curved trajectory along the forward and backward directions.
27. The seat structure as claimed in claim 26, wherein the guiding structure comprises a seat beam for the frame structure or an interface structure for mounting to the frame structure.
28. The seat structure as claimed in claim 26 or 27, wherein the curved trajectory comprises first and second opposing ends and an intermediate portion between the first and second ends, the intermediate portion being at a vertically lower position compared to the first and second ends.
29. The seat structure as claimed in any one of claims 24 to 28, wherein the first and second seat pans have substantially matching curvatures along respective depths thereof.
30. The seat structure as claimed in any one of claims 24 to 29, further comprising a roller mechanism or a sliding mechanism for the movement of the second seat pan relative to the first seat pan.
31. The seat structure as claimed in any one of claims 24 to 30, wherein one of the first and second seat pans comprises one or more slider elements for being received in corresponding one or more guiding tracks formed in the other.
32. The seat structure as claimed in any one of claims 24 to 31, further comprising biasing means for biasing the first and second seat pans in a first relative position to each other.
33. The seat structure as claimed in claim 32, wherein the biasing means comprises one or more springs.
34. The seat structure as claimed in claim 32 or 33, wherein in the first relative position, the second seat pan is substantially at a maximum backward position.
35. The seat structure as claimed in any one of claims 24 to 34, wherein the second seat pan is corrugated.
36. The seat structure as claimed in claim 35, wherein the second seat pan is corrugated along one or more directions thereof.
37. The seat structure as claimed in claim 35 or 36, wherein the first seat pan has substantially parallel curved top and bottom surfaces.
38. The seat structure as claimed in any one of claims 24 to 37, further comprising one or more retaining structures for limiting the relative movement of the first and second seat pans to a maximum displacement.
39. The seat structure as claimed in claim 38, wherein each restraining structure comprises a first element on one of the first and second seat pans and a second element on the other, for abutting each other at the maximum displacement.
40. The seat structure as claimed in any one of claims 24 to 39, wherein the second seat pan is further configured for receiving a force exerted by a seat back of the passenger seat for movement of the second seat pan relative to the first seat pan.
41. The seat structure as claimed in claim 40, wherein the second seat pan is configured to receive a pushing force exerted by the seat back.
42. The seat structure as claimed in claim 41, wherein the second seat pan is configured to receive the pushing force as a result of reclining of the seat back.
43. The seat structure as claimed in any one of claims 40 to 42, wherein the second seat pan comprises a flat surface disposed for receiving the force.
44. The seat structure as claimed in any one of claims 40 to 42, wherein the second seat pan comprises a surface with a recess formed therein for receiving the force.
45. The seat structure as claimed in claim 43 or 44, wherein the flat surface or the surface with the recess is disposed at one end of the second seat pan and extending substantially across a corrugation pattern of the second seat pan.
46. The seat structure as claimed in any one of claims 24 to 45, comprising a plurality of second seat pans and a common first seat pan.
47. A passenger seat comprising a seat structure as claimed in any one of the preceding claims.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

We claim:

1. A method for enhancing the reactivity of a T cell toward a tumour cell comprising the steps of:
(a) isolating the T cell from a patient, wherein the tumour cell is present in said patient;
(b) exposing the T cell to an agent, wherein the agent is capable of reducing or preventing expression or interaction of an endogenous Notch or Notch ligand in the T cell; and
(c) re-introducing the T-cell into the patient;
wherein the T cell comprises a T cell receptor specific for a tumour antigen expressed by the tumour cell.
2. The method according to claim 1, wherein the T cell is a tumour infiltrating lympocyte.
3. The method according to claim 1, wherein the tumour cell is a melanoma cell and wherein the tumour is a melanoma.
4. The method according to claim 1, wherein the tumour cell is a small cell lung tumour cell and wherein the tumour is a small cell lung tumour.
5. The method according to claim 1, wherein the agent is a nucleic acid sequence which is introduced into the T cell.
6. The method according to claim 1, wherein the agent is a polypeptide or a nucleic acid sequence that encodes a polypeptide selected from the group consisting of a Toll-like receptor, a cytokine a bone morphogenetic protein (BMP), a BMP receptor and an activin.
7. The method according to claim 1, wherein the endogenous Notch ligand is selected from the group consisting of Serrate, Delta and homologues thereof.
8. A method for enhancing the reactivity of a T cell toward a tumour cell comprising the steps of:
(a) isolating an antigen presenting cell (APC) from a tumour present in a patient;
(b) exposing the APC to an agent, wherein the agent is capable of reducing or preventing expression or interaction of an endogenous Notch or Notch ligand in the T cell when the T cell is contacted with the APC; and
(c) re-introducing the APC into the patient.
9. The method according to claim 8, wherein the T cell is a tumour infiltrating lympocyte.
10. The method according to claim 8, wherein the tumour cell is a melanoma cell and wherein the tumour is a melanoma.
11. The method according to claim 8, wherein the tumour cell is a small cell lung tumour cell and wherein the tumour is a small cell lung tumour.
12. The method according to claim 8, wherein the APC is a dendritic cell.
13. The method according to claim 8, wherein the agent is a nucleic acid sequence which is introduced into the APC.
14. The method according to claim 8, wherein the agent is a polypeptide or a nucleic acid sequence that encodes a polypeptide selected from the group consisting of a Toll-like receptor, a cytokine a bone morphogenetic protein (BMP), a BMP receptor and an activin.
15. The method according to claim 8, wherein the endogenous Notch ligand is selected from the group consisting of Serrate, Delta and homologues thereof.
16. A method for enhancing the reactivity of a T cell toward a tumour cell comprising the steps of:
(a) isolating a tumour cell from a tumour present in a patient;
(b) exposing the tumour cell to an agent, wherein the agent is capable of reducing or preventing expression or interaction of an endogenous Notch or Notch ligand in the T cell when the T cell is contacted with the tumour cell; and
(c) re-introducing the tumour cell into the patient.
17. The method according to claim 16, wherein the T cell is a tumour infiltrating lympocyte.
18. The method according to claim 16, wherein the tumour cell is a melanoma cell and wherein the tumour is a melanoma.
19. The method according to claim 16, wherein the tumour cell is a small cell lung tumour cell and wherein the tumour is a small cell lung tumour.
20. The method according to claim 16, wherein the agent is a nucleic acid sequence which is introduced into the tumour cell.
21. The method according to claim 16, wherein the agent is a polypeptide or a nucleic acid sequence that encodes a polypeptide selected from the group consisting of a Toll-like receptor, a cytokine a bone morphogenetic protein (BMP), a BMP receptor and an activin.
22. The method according to claim 16, wherein the endogenous Notch ligand is selected from the group consisting of Serrate, Delta and homologues thereof.
23. A method for enhancing the reactivity of a T cell toward a tumour cell comprising exposing the T cell to an agent which is capable of reducing or preventing expression, interaction or processing of an endogenous Notch or Notch ligand in the T cell.
24. The method according to claim 23, wherein the T cell is a tumour infiltrating lympocyte.
25. The method according to claim 23, wherein the tumour cell is a melanoma cell and wherein the tumour is a melanoma.
26. The method according to claim 23, wherein the tumour cell is a small cell lung tumour cell and wherein the tumour is a small cell lung tumour.
27. The method according to claim 23, wherein the agent is a nucleic acid sequence which is introduced into the T cell.
28. The method according to claim 23, wherein the agent is a polypeptide or a nucleic acid sequence that encodes a polypeptide selected from the group consisting of a Toll-like receptor, a cytokine a bone morphogenetic protein (BMP), a BMP receptor and an activin.
29. The method according to claim 23, wherein the endogenous Notch ligand is selected from the group consisting of Serrate, Delta and homologues thereof.
30. A method for enhancing the reactivity of a T cell toward a tumour cell comprising exposing the tumour cell to an agent which is capable of reducing or preventing expression, interaction or processing of an endogenous Notch or Notch ligand in the T cell when the T cell is contacted with the tumour cell.
31. The method according to claim 30, wherein the T cell is a tumour infiltrating lympocyte.
32. The method according to claim 30, wherein the tumour cell is a melanoma cell and wherein the tumour is a melanoma.
33. The method according to claim 30, wherein the tumour cell is a small cell lung tumour cell and wherein the tumour is a small cell lung tumour.
34. The method according to claim 30, wherein the agent is a nucleic acid sequence which is introduced into the tumour cell.
35. The method according to claim 30, wherein the agent is a polypeptide or a nucleic acid sequence that encodes a polypeptide selected from the group consisting of a Toll-like receptor, a cytokine a bone morphogenetic protein (BMP), a BMP receptor and an activin.
36. The method according to claim 30, wherein the endogenous Notch ligand is selected from the group consisting of Serrate, Delta and homologues thereof.
37. A method of vaccinating a patient against a tumour comprising administering an agent which is capable of reducing or preventing interaction, expression or processing of Notch or a Notch ligand.
38. A method of vaccinating a patient against a tumour comprising the steps of:
(a) administering a tumour antigen expressed by the tumour to a patient; and
(b) exposing an APC present in the patient to an agent, wherein the agent is capable of reducing or preventing interaction, expression or processing of Notch or a Notch ligand in a T cell.
39. The method according to claim 38, wherein the tumour antigen is administered topically to the skin of the patient.
40. The method according to claim 38, wherein the tumour is a melanoma.
41. The method according to claim 38, wherein the tumour is a small cell lung tumour.
42. The method according to claim 38, wherein the agent is a nucleic acid sequence.
43. The method according to claim 38, wherein the agent is a polypeptide or a nucleic acid sequence that encodes a polypeptide selected from the group consisting of a Toll-like receptor, a cytokine a bone morphogenetic protein (BMP), a BMP receptor and an activin.
44. The method according to claim 38, wherein the Notch ligand is selected from the group consisting of Serrate, Delta and homologues thereof.
45. A transgenic animal or cell line capable of expressing Notch, Notch ligand or an inhibitor or enhancer of Notch-Notch ligand interactions.
46. An anti-tumour vaccine or immunogenic composition comprising an agent which is capable of reducing or preventing interaction, expression or processing of Notch or a Notch ligand.
47. An anti-tumour vaccine or immunogenic composition comprising a tumour antigen and an agent which is capable of reducing or preventing interaction, expression or processing of Notch or a Notch ligand.